MT53B1024M64D8PM-062 WT:D TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	64Gb (1G x 64)
Clock Frequency:	1600MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	-30°C ~ 85°C (TC)

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Memory is an essential part of today\'s computing technology. Memory chips serve an important role in storing data and making programs run faster and more efficiently. MT53B1024M64D8PM-062 WT:D TR is a type of memory chip that is widely used in many applications. In this article, we\'ll discuss the application field and working principle of MT53B1024M64D8PM-062 WT:D TR memory.MT53B1024M64D8PM-062 WT:D TR is a dynamic random access memory (DRAM) module, which is commonly used for networking, data storage, and more. The module is capable of delivering high-performance operation with low power consumption. It uses up to four DDR4 DRAM chips arranged in parallel on the same PCB, each with a memory capacity of 1024 Megabytes (MB). This allows the MT53B1024M64D8PM-062 WT:D TR to offer a total memory capacity of 4096 MB.In terms of the technology and the design, this DRAM module is designed to support DDR4 applications that include network and storage systems, such as edge-computing, IoTs, and more. It also supports error-correction codes (ECC) and CRC (cyclic redundancy check) checksum, allowing it to detect and correct data integrity errors to a certain degree during the writing or reading process.The working principle of the MT53B1024M64D8PM-062 WT:D TR memory is based on the concept of dynamic random access memory (DRAM). DRAM is a type of semiconductor memory that stores each bit of data in a separate capacitor in an integrated circuit. The chip is built with millions of these capacitors alongside access transistors, which allow each capacitor to be accessed separately.To read or write data, a row and a column address is sent from the memory controller to the chip. This causes the access transistor in the capacitor to charge up and discharge the information stored in it. The accessed data is then sent back to the memory controller for further processing.DRAM is typically used in applications where random access is more important than continuous access. The MT53B1024M64D8PM-062 WT:D TR memory module is designed to meet the needs of such applications, by offering high-performance operation with low power consumption.The technology used in the MT53B1024M64D8PM-062 WT:D TR module is also known as Double Data Rate (DDR). This technology enables the memory to read and write data twice as fast as normal DRAM. The advantage of using this technology is that it allows data to be transferred twice as fast, which helps improve the speed and efficiency of the applications.Finally, the MT53B1024M64D8PM-062 WT:D TR memory is designed for low power consumption applications, with a low power standby mode. This can make it ideal for applications such as edge computing, as it doesn\'t require a high amount of energy in standby mode.In conclusion, the MT53B1024M64D8PM-062 WT:D TR memory is an example of cutting-edge memory technology, which offers high-performance operation with low power consumption. It is suitable for many applications, including network, storage, and more, due to its ability to detect errors and read and write data twice as fast as normal DRAM.

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