MT53B256M32D1GZ-062 WT:B TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	8Gb (256M x 32)
Clock Frequency:	1600MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	-30°C ~ 85°C (TC)

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Introduction to MT53B256M32D1GZ-062 WT:B TR

The MT53B256M32D1GZ-062 WT:B TR is a high-speed, low-power double data rate synchronous dynamic random access memory (SDRAM) device. This device is organized as 269,843,456 words × 8bits with two or four independent address/control buses. The device supports multiple memory applications including general memory expansion, graphics frame buffers, embedded memory cores and high-performance computing applications.

Features

The MT53B256M32D1GZ-062 WT:B TR is a high-performance, low power memory device designed to meet the growing demand for bandwidth and memory capacity in today’s data and communications applications. The device has a maximum operating frequency of 800 MHz, the industry’s highest data rate, combined with a low-voltage power supply.The MT53B256M32D1GZ-062 WT:B TR has a wide range of features that make it suitable for a variety of applications. The device has a single cycle write latency and a burst length of seven. It also features on-chip ECC for improved reliability and Error Detection and Correction (EDC). Furthermore, it has on-chip data bus inversion for fast data transfer and a low-power standby mode for increased power savings and longer battery life.

Application Field and Working Principle

The MT53B256M32D1GZ-062 WT:B TR is an effective and high-performance component that is suitable for a broad range of applications. These applications include embedded systems, medical systems, communications and networking, aerospace, industrial process control, streaming data and video infotainment.The device operates using a double data rate system where memory is accessed using a synchronous pipeline principle. This ensures fast access times and data transfer rates. Data is stored in a continuous series of blocks and each block is identified by an address. The data is split into two separate data streams which are then transferred independently over two data buses. The device supports multiple access modes including Auto-Precharge, Burst Reads and Page Mode.

Conclusion

The MT53B256M32D1GZ-062 WT:B TR is a high-performance, low-power memory component designed to meet the growing demand for increased memory capacity and speed in data-heavy applications. The device is suitable for a variety of applications, featuring a high operating frequency, single cycle write latency, on-chip ECC and burst length of seven. It operates using a double data rate system and supports multiple access modes, making it an ideal choice for demanding applications.

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