MT53D512M32D2NP-046 AAT ES:D

Series:	--
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	16Gb (512M x 32)
Clock Frequency:	2133MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	-40°C ~ 105°C (TA)

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MT53D512M32D2NP-046 AAT ES:D Memory

The MT53D512M32D2NP-046 AAT ES:D (Advanced Application Toolkit) is a semiconductor memory device specifically designed for embedded systems applications. It is based on the DDR3SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) technology and provides a storage capacity of 512Mb (5.12Gbit). The MT53D512M32D2NP-046 also features an array of advanced features, such as programmable error correction, system level write protection and low voltage operation.The MT53D512M32D2NP-046 AAT ES:D is specifically designed to support the latest embedded systems applications. It offers the highest performance and reliability in the most demanding environments. The MT53D512M32D2NP-046 provides superior data control, extended life-cycles, greater data integrity and more efficient system management than other memories.The MT53D512M32D2NP-046 is a high-speed, low-voltage memory device. It supports up to 8 banks and a total of 8,192 bytes of main memory. The MT53D512M32D2NP-046 also supports Error Correction Code (ECC) to reduce the impact of errors on data integrity. The ECC can be programmed to detect and correct errors, thus ensuring data integrity and reliability.Working Principle of MT53D512M32D2NP-046The MT53D512M32D2NP-046 AAT ES:D employs a sophisticated design principle to achieve greater performance and reliability. It uses a dual-channel architecture to reduce the number of chips needed to store the same amount of data. The MT53D512M32D2NP-046 features an advanced 64-bit burst mode and multi-bit pre-fetching mechanism that increases the data transfer rate compared to traditional DDR SDRAMs.The MT53D512M32D2NP-046 uses a dedicated memory controller to manage data transfers between the device and the host system. The memory controller is responsible for the control, timing and addressing of the memory device. The MT53D512M32D2NP-046’s advanced error correction and system level write protection ensure that data stored and retrieved from the memory are always accurate.The MT53D512M32D2NP-046 is designed to handle the most demanding applications. It employs rigorous testing methods to ensure the highest level of reliability. The device is also designed to be backward compatible with earlier versions of DDR3 SDRAMs, allowing it to easily integrate into existing systems.Application Field of MT53D512M32D2NP-046Due to its high performance and reliability, the MT53D512M32D2NP-046 is ideal for use in embedded systems applications. Its low power requirements, wide temperature range and extended life-cycle make it ideal for a variety of industrial and Military/Avionics applications. It is also well suited for medical, aerospace and electronic industrial applications.The MT53D512M32D2NP-046 is also an excellent choice for embedded systems, Internet of Things (IoT), automotive and telecommunications applications. Its high performance and reliable operation make it a popular choice for applications that require a large amount of data storage and access. It is also an excellent choice for applications that require fast data transfers and the ability to support multiple tasks simultaneously.ConclusionThe MT53D512M32D2NP-046 AAT ES:D memory is a powerful and reliable memory device designed for embedded systems. It offers superior performance and reliability in the most demanding environments. The device’s advanced error correction, system level write protection, low power requirements, wide temperature range and extended life-cycle make it an ideal choice for a variety of embedded systems, Internet of Things (IoT), telecommunication and industrial applications.

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