| Allicdata Part #: | MT53B2DDNP-DC-ND |
| Manufacturer Part#: |
MT53B2DDNP-DC |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | SPECIAL/CUSTOM LPDDR4 |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC |
| DataSheet: | MT53B2DDNP-DC Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
Description
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Memory is an essential part of several diverse electronic components. It is important for storing, organizing and accessing data quickly and efficiently. MT53B2DDNP-DC is a type of memory that can be used in electro-mechanical systems to store and retrieve data in a range of applications.
MT53B2DDNP-DC is a dynamic dual in-line memory module (DIMM) that has a capacity of 16 MB, a clock speed of 25.7 MHz and a refresh rate of 64 ms. It has two sided gold contact with 184 pins on each side of the DIMM and operates at a voltage of 3.3 V. The memory is made up of sixteen 4Mx4 chip with a 72 bit interface, each containing 32K words of x 8 bits. The module also has an integrated address register, power line filter and a row address strobe (RAS) counter.
MT53B2DDNP-DC is used in a range of applications, from industrial control to robotics, medical, military and aerospace. It can be used in systems that require high-performance memory storage, such as data-logging systems, embedded systems, and monitoring and surveillance systems. It is designed to provide reliable performance and low power consumption.
The working principle of MT53B2DDNP-DC is based on the dynamic random access memory (DRAM) technology. This type of memory module contains an array of memory cells that can be individually addressed. When a memory cell is addressed, it stores a logical 1 or 0 in its cell structure. The amount of data that can be stored in a memory cell depends on the memory module’s capacity and its interface width. The MT53B2DDNP-DC module has a 72-bit wide interface that provides a total storage capacity of 16 MB, making it suitable for both large and small data loads.
When a read or write instruction is given to the memory cell, the memory controller sends a control signal that reads or writes the data stored in the memory cell. The memory controller also generates a row address strobe (RAS) signal that signals to other cells in the row that the data is ready to be read or written to them. The integrated address register stores the address of the data that is to be read or written as well as a memory clock, which is used to synchronize the operation of all the memory cells. The power line filter is used to ensure that all the power levels in the module are kept stable.
In summary, MT53B2DDNP-DC is a type of memory module that is used in a range of applications and is based on the dynamic random access memory (DRAM) technology. It has a capacity of 16 MB and operates at a voltage of 3.3 V. It is designed to provide reliable performance and low power consumption, and can be used in systems that require high-performance memory storage.
The specific data is subject to PDF, and the above content is for reference
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MT53B2DDNP-DC Datasheet/PDF