MT53D1024M32D4DT-046 AUT:D TR

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Memory is the collective term for a group of computer components that store information and supports the computing process. Amongst the many types of computer memory, Dynamic Random Access Memory (DRAM) is one of the most common and also one of the oldest, having first been developed in the early 1970s. DRAM is a type of random access memory (RAM) that stores information in a capacitor, allowing it to be quickly accessed more so than the traditional magnetic storage solutions like hard drives.

The MT53D1024M32D4DT-046 AUT:D TR is a specialized dynamic random access memory (DRAM) module typically used for high-bandwidth, general-purpose computing applications. It is a 512Mb 32M x 32 DIMM/4-bit DDR4 DRAM module, which is built for today\'s multi-system requirements and growing memory demands, and is optimized for best-in-class performance, power and area efficiency.

The MT53D1024M32D4DT-046 AUT:D TR features high levels of parallelism, data rate transfer of up to 3200MT/s, and low power consumption. With 4-bit Pre-Fetch, Advanced Command Queuing, Error Correcting Code (ECC), and Triple Data Rate (TDR) technologies, the MT53D1024M32D4DT-046 AUT:D TR provides high levels of compute performance, reliability and system scalability. In addition, its adjustable latencies, refresh cycles, and refresh modes can be tailored to the user’s current computing needs.

Typical applications for the MT53D1024M32D4DT-046 AUT:D TR include server and storage systems, high-performance computing systems, file servers, and data-intensive workloads. These applications require a powerful and reliable DRAM solution that can support even the mosthighly demanding tasks.

The MT53D1024M32D4DT-046 AUT:D TR is built with a wide range of features that help deliver higher levels of data integrity, speed, and performance. For instance, its Error-Correcting Code (ECC) capability helps ensure the accuracy and integrity of data, while its Triple Data Rate (TDR) feature helps improve the response and access times of the memory. Additionally, its 4-bit Pre-Fetch technology helps improve data throughput, while its Advanced Command Queuing (ACQ) helps ensure the memory can handle even the most demanding tasks.

The MT53D1024M32D4DT-046 AUT:D TR DRAM module is also designed to be energy efficient, delivering low power consumption and optimal performance. Its adjustable refresh rates, latencies, and modes help ensure maximum energy efficiency and system scalability. Additionally, its Thermal Sensor Compensation (TEC) feature helps to further optimize the module power efficiency by compensating for its temperature changes.

In conclusion, the MT53D1024M32D4DT-046 AUT:D TR DRAM module is an ideal choice for general-purpose computing applications that demand reliable, high-bandwidth memory solutions. It offers superior data integrity, speed, and performance with its advanced commands queuing, error-correcting code, and pre-fetch technologies. Additionally, it also provides optimal power efficiency with its adjustable refresh rates, latencies, modes, and its thermal sensor compensation feature.

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