
Allicdata Part #: | MT53B256M32D1PX-062XT:C-ND |
Manufacturer Part#: |
MT53B256M32D1PX-062 XT:C |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 8G 1600MHZ |
More Detail: | SDRAM - Mobile LPDDR4 Memory IC 8Gb (256M x 32) 1... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 8Gb (256M x 32) |
Clock Frequency: | 1600MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.1V |
Operating Temperature: | -30°C ~ 105°C (TC) |
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What Is MT53B256M32D1PX-062 XT:C?
MT53B256M32D1PX-062 XT:C is a type of DRAM (Dynamic Random Access Memory). DRAM is a type of computer memory which can store data while the device is running. This type of DRAM stores data in a three dimensional address space created by two columns and two rows. It is an integrated circuit that is used in contemporary digital electronic devices such as smartphones, tablets, laptops, and PCs.
Application Field and Working Principle
As an integrated circuit, the MT53B256M32D1PX-062 XT:C DRAM is used in many applications including computing and communications, industrial systems, automotive systems, medical equipment, military and aerospace, and consumer electronics. MT53B256M32D1PX-062 XT:C DRAM typically is used in applications where working without fail and large data access are important. In these applications, the MT53B256M32D1PX-062 XT:C DRAM is ideal because it cut downs the energy and space requirements, yet providing significantly faster data access.
The MT53B256M32D1PX-062 XT:C DRAM works by sensing and storing data charges in capacitors or cells within the integrated circuit. To access data, the charges in the cell are need to be transferred to a buffer. In order to do this, the DRAM must first detect the information stored within the capacitor. This involves the use of two complementary signals, also known as sensing signals. For a DRAM system to work, the correct combination of voltage and timing must be applied to the device. The primary benefit of this type of DRAM is its ability to transfer data quickly, which makes it suitable for a variety of applications.
Conclusion
The MT53B256M32D1PX-062 XT:C DRAM is a type of DRAM (Dynamic Random Access Memory) integrated circuit that is used in contemporary digital electronic devices. It is used in applications where working without fail and large data access are important, cutting down on energy and space requirements while providing significantly faster data access. The DRAM works by sensing and storing data charges in capacitors or cells within the integrated circuit, and can transfer data quickly, making it suitable for a variety of applications. Understanding the application field and working principle of MT53B256M32D1PX-062 XT:C DRAM will help you make the best choice for your own project needs.
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MT53B256M32D1GZ-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ 200FBG... |
MT53B768M32D4DT-062 AIT:B | Micron Techn... | -- | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
MT53B256M32D1DS-062 XT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZSDRAM -... |
MT53B2G32D8QD-062 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 64G 2GX32 FBGA 8DP... |
MT53D512M64D4NW-046 WT ES:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZ FBGAS... |
MT53B384M64D4NH-062 WT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
MT53B128M32D1DS-062 AAT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G 1600MHZSDRAM -... |
MT53D512M32D2NP-046 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
MT53B256M32D1NP-062 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ FBGASD... |
MT53B512M32D2GZ-062 WT ES:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
MT53B2DDNP-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4SDRA... |
MT53B384M64D4TP-062 XT ES:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
MT53D512M32D2NP-046 AAT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
MT53D1024M32D4DT-046 AUT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZ FBGAS... |
MT53D512M64D4RQ-053 WT ES:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
MT53D768M64D8SQ-046 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
MT53B768M32D4DT-062 AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
MT53D768M64D8WF-053 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
MT53E512M32D2NP-046 TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 16G 512MX32 FBGA W... |
MT53B512M64D4EZ-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
MT53B256M32D1GZ-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ 200FBG... |
MT53D384M32D2DS-053 XT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
MT53D8DAWF-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
MT53D4DCSB-DC TR | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
MT53B384M64D4NH-062 WT ES:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
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