MT53B256M64D2NL-062 XT:C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

MT53B256M64D2NL-062 XT:C is a low-power, high-speed synchronous DRAM. DRAMs are used extensively in applications such as computers, laptops, cell phones and other electronic devices.

Memory Category

MT53B256M64D2NL-062 XT:C belongs to the Memory category. Memory is an important component of all digital systems, providing storage for data and programs. There are three main types of memory in use today: RAM, ROM, and Flash Memory. RAM (Random Access Memory) is used for storing data and programs in order to be accessed quickly. ROM (Read Only Memory) is used for storing information or instructions that will not be changed, such as boot programs or device drivers. Flash Memory is a type of non-volatile memory used extensively in digital devices such as USB drives and media players.

Features & Benefits

MT53B256M64D2NL-062 XT:C offers several features and benefits. It is a low-power, high-speed synchronous DRAM, with 256Mbits of storage and a 64-bit wide data bus. It is designed to operate at 1.6V supply and supports multiple package options to save board space. This DRAM provides an outstanding data rate of 800MT/s, high speed data transfer and low latency.

MT53B256M64D2NL-062 XT:C also features on-chip ECC (Error Correcting Code) support and on-chip array parameters such as auto-precharge, power management, standby and refresh for low power consumption. By using this DRAM, it is possible to utilize better chips and high speed interfaces to provide customers with improved performance and reliability. In addition, this DRAM uses a dual-rank configuration, enabling double the number of read and write cycles.

Applications

MT53B256M64D2NL-062 XT:C is widely used in high-speed and high-performance computing applications such as servers, networking, system-on-chip, embedded systems, automotive infotainment and healthcare.

This DRAM is also used in energy-efficient designs such as communication networks, routers, wireless base stations and high-density memories. In addition, it is also suited for use in gaming, image recognition, AI and robotics applications.

Working Principle

MT53B256M64D2NL-062 XT:C works on the principle of a synchronous DRAM. The DRAM consists of an array of cells connected to a row decoder, a column decoder and a sense amp. In a synchronous DRAM, data access is synchronized to a defined clock period. The clock signal starts a cycle, and the row decoder selects a row of cells in the array. The column decoder then enables the data in the selected cells to be accessed. The data is then passed to the sense amp which performs the amplification of the data and conditions it for reading or writing.

Once the read or write operation is complete, the sense amp returns the data and the cycle is terminated. MT53B256M64D2NL-062 XT:C also features several on-chip features, such as auto-precharge, power management and refresh, to help improve performance and reduce power consumption.

Conclusion

MT53B256M64D2NL-062 XT:C is a low-power, high-speed synchronous DRAM which is widely used in high-performance computing applications. This DRAM features on-chip ECC support and various built-in features that help save power and improve performance. It operates on the principle of a synchronous DRAM and offers fast data transfer, high speed data transfer and low latency.

The specific data is subject to PDF, and the above content is for reference