
Allicdata Part #: | MT53B256M64D2TP-062LXTES:C-ND |
Manufacturer Part#: |
MT53B256M64D2TP-062 L XT ES:C |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G 1600MHZ FBGA |
More Detail: | SDRAM - Mobile LPDDR4 Memory IC 16Gb (256M x 64) ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 16Gb (256M x 64) |
Clock Frequency: | 1600MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.1V |
Operating Temperature: | -- |
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Memory technology has had a significant impact on the world of computing, from small embedded systems to large-scale enterprise servers. The MT53B256M64D2TP-062 L XT ES:C memory chip meets the needs of today\'s market for high-speed, high-capacity storage solutions. This article will explore the application field and working principle of this memory chip.
Applications:
The MT53B256M64D2TP-062 L XT ES:C memory chip provides high-performance and high-capacity storage capabilities for many applications, including high-performance computing, mobile computing, communications, embedded systems, and industrial automation. The chip is used in modern systems to provide the high-capacity storage necessary for large data sets and the high-performance required to process them quickly. It is especially suitable for networking applications and data-intensive applications such as web servers, data centers, and machine learning systems.
The memory chip is also often used in industrial and embedded systems. It has the advantage of being able to store a large amount of data in a relatively small space, so it is ideal for embedded systems that need to store a lot of data within a limited form factor. The chip can also be used in industrial control systems, where it is able to store large numbers of parameters and variables.
Working Principle:
The MT53B256M64D2TP-062 L XT ES:C memory chip is based on a free-running oscillator architecture, which allows it to access data at near-instantaneous speeds. It uses a “pipelining” approach, where data is read from memory in “pipelines” of eight data words. This allows the chip to read and write data to memory in a very short period of time. When a data access request is made, the chip will fetch the corresponding data from memory and return it to the host device.
The MT53B256M64D2TP-062 L XT ES:C memory chip also features a low-power sleep mode, which allows it to reduce its power consumption when not in use. This chip supports a number of acceleration technologies, such as double data rate (DDR) and low-voltage differential signaling (LVDS) to ensure high data transfer speeds. In addition, the chip also incorporates a variety of error-checking mechanisms, such as parity checking, to ensure the integrity of data.
Conclusion:
The MT53B256M64D2TP-062 L XT ES:C memory chip is a high-speed, high-capacity memory chip that is suitable for a wide range of applications. It provides the high-capacity and high-performance necessary for many different uses, from networking applications to embedded systems and industrial control systems. The chip also features a number of features such as low-power sleep mode and error-checking mechanisms to ensure the integrity of data.
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Part Number | Manufacturer | Price | Quantity | Description |
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MT53B512M64D4TX-053 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
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MT53D512M32D2DS-046 AUT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
MT53B384M64D4TX-053 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
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MT53B4DCNY-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4SDRA... |
MT53B256M32D1GZ-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ 200FBG... |
MT53B768M32D4DT-062 AIT:B | Micron Techn... | -- | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
MT53B256M32D1DS-062 XT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZSDRAM -... |
MT53B2G32D8QD-062 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 64G 2GX32 FBGA 8DP... |
MT53D512M64D4NW-046 WT ES:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZ FBGAS... |
MT53B384M64D4NH-062 WT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
MT53B128M32D1DS-062 AAT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G 1600MHZSDRAM -... |
MT53D512M32D2NP-046 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
MT53B256M32D1NP-062 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ FBGASD... |
MT53B512M32D2GZ-062 WT ES:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
MT53B2DDNP-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4SDRA... |
MT53B384M64D4TP-062 XT ES:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
MT53D512M32D2NP-046 AAT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
MT53D1024M32D4DT-046 AUT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZ FBGAS... |
MT53D512M64D4RQ-053 WT ES:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
MT53D768M64D8SQ-046 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
MT53B768M32D4DT-062 AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
MT53D768M64D8WF-053 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
MT53E512M32D2NP-046 TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 16G 512MX32 FBGA W... |
MT53B512M64D4EZ-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
MT53B256M32D1GZ-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ 200FBG... |
MT53D384M32D2DS-053 XT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
MT53D8DAWF-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
MT53D4DCSB-DC TR | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
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