MT53D256M64D4KA-046 XT:B

Series:	--
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	16Gb (256M x 64)
Clock Frequency:	2133MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	-30°C ~ 105°C (TC)

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Memory

Technology advances rapidly and widely, with memory being a crucial component in all computing products. The MT53D256M64D4KA-046 XT:B is a memory module used in a variety of electronic devices. This article will provide a high-level description of the application field and working principle of the MT53D256M64D4KA-046 XT:B memory module.The MT53D256M64D4KA-046 XT:B is a type of dynamic random access memory (DRAM) which is a kind of volatile memory. It is a common component of computers and other electronic devices, offering higher capacity and faster operation than other memories. The MT53D256M64D4KA-046 XT:B has a capacity of 256 MB, a maximum clock frequency of 400 MHz and a data transfer rate of up to 3.2 GB/s. It also has a temperature range of 0°C to 70°C and is housed in a 31-pin TSOP package.The MT53D256M64D4KA-046 XT:B is used in a variety of electronic devices and applications, such as computers, embedded systems, server systems, routers and switches, military systems, and industrial control systems. It is specifically designed for high-performance applications and provides excellent performance, particularly in high-speed operations.The working principle of the MT53D256M64D4KA-046 XT:B is based on dynamic access of random data stored in a volatile memory matrix. The memory module is organized in a grid layout: an array of memory cells arranged in rows and columns. Each memory cell consists of a small capacitor and a transistor, both of which are crucial components of the memory matrix. The DRAM operation is based on the discharge and recharge cycle of the capacitor, allowing data to be stored in and retrieved from the memory cells.The MT53D256M64D4KA-046 XT:B memory module is controlled by a system bus bridge and a set of integrated controller chips. The system bus bridge is responsible for communication between the memory module and the system bus, while the integrated controller chips manage the different types of memory operations, such as read, write and refresh. In addition, the integrated controller chips also provide protection against data corruption and power-on resetting.Finally, the MT53D256M64D4KA-046 XT:B memory module also has an on-chip EDC/ECC feature which protects against data errors. The EDC/ECC circuit can detect and correct single-bit and double-bit errors, ensuring data integrity and reliability.In conclusion, the MT53D256M64D4KA-046 XT:B is a type of DRAM used in many electronic devices and applications. It has a memory capacity of 256 MB and can provide data transfer rates of up to 3.2 GB/s. It is controlled by a system bus bridge and a set of integrated controller chips, which manage different types of memory operations and offer protection against data corruption and power-on resetting. Furthermore, the MT53D256M64D4KA-046 XT:B also has an on-chip EDC/ECC feature which protects against single-bit and double-bit errors.

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