MT53B256M64D2NV-062 XT:C TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	16Gb (256M x 64)
Clock Frequency:	1600MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	--

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What is the MT53B256M64D2NV-062 XT:C TR?

The MT53B256M64D2NV-062 XT:C TR is a dynamic random access memory (DRAM) chip produced by Micron Technology, Inc. It is part of the company’s XT:C TR family of products. The chip is designed to provide superior performance and cost-effective scalability in high-density memory systems.

Applications

The MT53B256M64D2NV-062 XT:C TR is ideal for applications that require a high capacity memory system, such as server and storage, networking, and embedded applications. It can be used to upgrade existing memory systems or to provide new memory capacity for applications that require large amounts of data.The chip is also suitable for various digital consumer applications, such as gaming consoles, tablets, and smartphones, where performance and cost are important factors.

Features and Advantages

The MT53B256M64D2NV-062 XT:C TR features advanced error-correcting code (ECC) technology and a high speed interface. The chip supports data transfer rates of up to 2.1 Gb/s and a maximum operating frequency of 500 MHz. It also includes an on-chip thermal shutdown circuit for improved reliability. The chip has a larger operating temperature range (0°C to +90°C) than other chips in the XT:C TR family, making it suitable for a wider range of applications. It also offers excellent refresh performance and power to support a wide range of applications.

Working Principle and Specifications

The MT53B256M64D2NV-062 XT:C TR utilizes a double-data rate (DDR) architecture to provide high speed operation. In this architecture, data is transferred on both the rising and falling edges of a clock signal. This allows for twice the data rate compared to a standard synchronous DRAM chip.The chip has a total density of 256Mbits and is comprised of 64Mx4 with an internal organization of X8. It has an operating voltage of 1.8V and I/O voltage of 2.5V. The chip is also compatible with Micron’s D-die DRAM technology, which provides an optimized power and packaging solution for high-performance memory systems.

Conclusion

The MT53B256M64D2NV-062 XT:C TR is a dynamic random access memory (DRAM) chip from Micron Technology, Inc. It is designed to meet the needs of high-density memory systems, providing superior performance, scalability, and cost-efficiency. The chip has a high-speed DDR architecture and supports data transfer rates up to 2.1 Gb/s. It is suitable for a wide range of applications, including servers, storage, networking, and embedded applications, as well as digital consumer applications like gaming consoles, tablets, and smartphones.

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