MT53B512M64D4EZ-062 WT:C TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	32Gb (512M x 64)
Clock Frequency:	1600MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	-30°C ~ 85°C (TC)

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Introduction

MT53B512M64D4EZ-062 WT:C TR is a memory device that belongs to the MT53 family from SK Hynix. It is a 512Mbit DDR4 DRAM, which is the latest generation of DRAM technology. The device comes in an 84-ball BGA package and offers speeds of up to 3200Mbps. This device is designed for high-performance applications and offers superior performance compared to traditional DRAM.

Application Field

The MT53B512M64D4EZ-062 WT:C TR is well suited for applications that require high performance, such as gaming consoles, networking appliances, and embedded industrial and automotive applications.The device comes with several features that make it suitable for these applications. For one, it has an error correction code (ECC) feature, which helps to detect and correct errors in data transmission. This ECC feature helps to ensure that data is accurate and free of errors.It also has a high temperature operating range, which makes it ideal for embedded systems and other applications that function in high temperatures. The device also has a low power consumption level, which is important for embedded systems that run on battery power.The device also has a high-speed interface, which means that data can be transmitted quickly. This is important for applications that need to transfer large amounts of data.Finally, the device comes with built-in self-refresh, which helps to maintain the integrity of stored data. This feature is crucial for applications that perform mission-critical tasks.

Working Principle

The MT53B512M64D4EZ-062 WT:C TR operates according to the DDR4 standard. This standard defines the electrical and timing parameters necessary for a DRAM device to work in a DDR4 system.The device works by reading data from an internal memory array, which is divided into small segments called banks. The device reads a data word from each bank by sending a series of signal to the bank controllers. Each bank controller is responsible for organizing the data within the bank and delivering it to the external interface.The device can read and write data simultaneously, making it suitable for high-speed applications. It is also capable of operating at high temperatures and while consuming low amounts of power.

Conclusion

The MT53B512M64D4EZ-062 WT:C TR is a high-performance DRAM device from SK Hynix. It is well-suited for high-performance applications, such as gaming consoles, networking appliances, and embedded applications. The device uses the DDR4 standard for data transmission and offers high speed, low power consumption, high temperature capabilities, and built-in self-refresh.

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