MT53B384M32D2DS-062 XT:B Allicdata Electronics
Allicdata Part #:

MT53B384M32D2DS-062XT:B-ND

Manufacturer Part#:

MT53B384M32D2DS-062 XT:B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 12G 1600MHZ
More Detail: SDRAM - Mobile LPDDR4 Memory IC 12Gb (384M x 32) ...
DataSheet: MT53B384M32D2DS-062 XT:B datasheetMT53B384M32D2DS-062 XT:B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 12Gb (384M x 32)
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: --
Memory Interface: --
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Description

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Memory technology is rapidly advancing in today\'s world. One such product, the MT53B384M32D2DS-062 XT:B, is making its mark in the industry. This enterprise grade product enhances performance and reliability in a number of application fields, and can be found in a wide range of sectors, from computer technology to consumer electronics.

The MT53B384M32D2DS-062 XT:B is a DDR3 SDRAM product, using the latest and greatest in chip-stacking technology. It utilizes up to 8 stacked die to provide the optimal balance of capacity and access times. This device provides an impressive 384-bit data bus with a memory capacity of up to 32GB. The out of order register set allows for independent command execution, while the multi-bank logic offers a burst of up to 16 operations per cycle. The device also supports Single Device Data Correction (SDDC), making data transfers more reliable than ever before.

The versatile MT53B384M32D2DS-062 XT:B has a variety of uses, with applications that span multiple industries. It is suitable for use in high-performance servers, workstations, embedded systems, and other high-end applications. Its outstanding performance lends itself to computing and networking applications, such as gaming and high-resolution graphics, as well as media and audio streaming applications. Additionally, the device is well suited for use in consumer electronics, providing an excellent platform to expand storage and memory capabilities in a wide range of devices.

At the heart of the MT53B384M32D2DS-062 XT:B is its advanced operating principle, which is based on a highly effective synchronous DRAM (SDRAM) and logic algorithm. This system utilizes two paths to access memory - the command and data paths. The command path processes active requests, and the data path controls the memory array by issuing read/write instructions to active blocks. The chip can buffer several instructions, allowing it to access up to four read/write cycles per clock cycle. As a result, data is read and written faster, boosting overall processing speed.

The MT53B384M32D2DS-062 XT:B memory also uses row hit detection to scan the data cache. This process compares the address of any given request with that of the previous request. If the address matches, the row hit indicator will be activated and the data from the previously requested location will be accessed. This dramatically reduces access time, as no additional searches are needed to locate the data, providing for faster memory access.

The MT53B384M32D2DS-062 XT:B is one of the latest advancements in memory technology. It enables faster, more reliable data processing in a variety of applications, while providing an effective way to maximize memory capacity and access times. The device, with its advanced features and capability, is the perfect choice for enterprise grade applications.

The specific data is subject to PDF, and the above content is for reference

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