MT53B4DCNQ-DC

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MT53B4DCNQ-DC is a type of dynamic random access memory (DRAM), a type of memory module that stores information using capacitors, allowing information to be stored for long periods of time even after power is removed. MT53B4DCNQ-DC is typically used in computer systems where high-performance and high-speed are paramount. It is also commonly used in Game Consoles, Embedded Systems, and Robotics.

MT53B4DCNQ-DC is manufactured using a high-speed interface, allowing it to operate at a speeds of up to 1600MHz. It supports Error Correction Code (ECC) and has a CL11 latency rating. It also boasts a wide range of operating temperature, allowing it to operate in temperatures of up to 85°C. With a maximum memory bandwidth of 12.8GB/s, MT53B4DCNQ-DC is highly capable of delivering performance and stability.

The MT53B4DCNQ-DC is composed of multiple DRAMs, organized as an array of rows and columns. Each DRAM cell is composed of two capacitors and a single transistor. When power is supplied to the individual cell, it charges the two capacitors and the data stored in them is passed through the transistor to the circuitry the DRAM is connected to. Memory cells retain the data stored in them until the power is removed.

Data can be written to and read from the memory cells using a series of write and read commands. A write command will write data to the memory cell, while a read command will retrieve the data stored in the cell. Because the data is stored in capacitors, any data stored in the cells must be constantly updated, otherwise it will eventually be lost.

The MT53B4DCNQ-DC is designed to have a long life span, allowing it to be used in high-performance applications. With ECC support and a wide range of operating temperatures, the MT53B4DCNQ-DC is an excellent choice for embedded systems that require a reliable and high-performance memory solution.

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