MT53D1024M64D8NW-062 WT ES:D Allicdata Electronics
Allicdata Part #:

MT53D1024M64D8NW-062WTES:D-ND

Manufacturer Part#:

MT53D1024M64D8NW-062 WT ES:D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 64G 1600MHZ FBGA
More Detail: SDRAM - Mobile LPDDR4 Memory IC 64Gb (1G x 64) 16...
DataSheet: MT53D1024M64D8NW-062 WT ES:D datasheetMT53D1024M64D8NW-062 WT ES:D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (1G x 64)
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: --
Memory Interface: --
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Description

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MT53D1024M64D8NW-062 WT ES:D

Memory is an essential component of all electronic devices. It is the storage unit of information and data. MT53D1024M64D8NW-062 WT ES:D is a type of memory device that provides constantly accessible storage. This type of memory is used in a wide range of applications, from automotive and consumer electronics to medical and military applications. In this article, we will discuss the application field and working principle of MT53D1024M64D8NW-062 WT ES:D.

Application Field of MT53D1024M64D8NW-062 WT ES:D

The MT53D1024M64D8NW-062 WT ES:D is a double data rate (DDR) Random Access Memory (RAM). It is a type of synchronous dynamic random access memory (SDRAM). SDRAM is benefical for applications requiring higher data rates because it has a faster memory access speed. With its moderate power consumption, it can be used in a wide range of applications including automotive, consumer electronics, medical, as well as industrial and military fields.

Automotive applications often require high-performance, high-reliability and low-power-consumption memory components. The MT53D1024M64D8NW-062 WT ES:D is ideal for these applications as it features compact size, a lightweight efficiency and stable operation. Furthermore, it offers high-speed data transfer rate and low power consumption, making it ideal for connecting different components in the automotive industry.

In consumer electronics, the MT53D1024M64D8NW-062 WT ES:D is also used to reduce power consumption and improve performance. It is suitable for components such as digital cameras, tablets, and smartphones, as it has low power consumption and high reliability. Furthermore, the MT53D1024M64D8NW-062 WT ES:D provides high data transfer rates for faster data transfer, enabling the devices to read and write data quickly.

The MT53D1024M64D8NW-062 WT ES:D is also highly reliable, making it suitable for medical applications, such as pacemakers, blood pressure monitors, and other medical devices that require a dependable memory. Additionally, as the MT53D1024M64D8NW-062 WT ES:D offers high-speed data transfer, it can provide the medical devices with instant and accurate data.

The MT53D1024M64D8NW-062 WT ES:D is also an excellent choice for industrial or military applications. As it features low-power consumption, it can be used to reduce power consumption and offer a wide variety of features. Furthermore, MT53D1024M64D8NW-062 WT ES:D is resistant to extreme temperature, vibration, shock, and other environmental changes, making it ideal for long-term and mission-critical military applications.

Working Principle of MT53D1024M64D8NW-062 WT ES:D

The MT53D1024M64D8NW-062 WT ES:D is a type of synchronous dynamic random access memory (SDRAM). It is a form of dynamic random access memory (DRAM) that uses clocking signals in order to synchronize with the system clock, allowing for faster data transfers. The device is based on a synchronous interface that sends and receives data in synchronized signals.

The MT53D1024M64D8NW-062 WT ES:D has two data buses that operate in parallel, one running on the rising edge of the clock signal, and the other running on the falling edge. This allows it to transfer data on both edges of the clock signal, twice as fast as regular DRAM. Additionally, the device perform bus cycles twice as fast as regular DRAM, making data transfers faster.

The MT53D1024M64D8NW-062 WT ES:D has two ports that allow two independent operations to be performed in the same clock cycle. This allows for faster operation and better multitasking. In addition, the MT53D1024M64D8NW-062 WT ES:D supports both registerbanked and address mapped modes, allowing for more flexible application designs.

The MT53D1024M64D8NW-062 WT ES:D is designed to provide high performance and efficiency. It features refresh cycles that are up to seven times faster than regular DRAMs, providing faster operation and better multitasking. Additionally, the device has higher resistance to environmental changes, offering a reliable performance and a longer operating life.

Conclusion

MT53D1024M64D8NW-062 WT ES:D is a type of memory device that provides constantly accessible storage. It is suitable for a wide range of applications in the automotive, consumer electronics, medical, industrial and military fields. The device has a double data rate (DDR) Random Access Memory (RAM) and is based on a synchronous interface that can transfer data on both edges of the clock signal. Furthermore, the MT53D1024M64D8NW-062 WT ES:D features refresh cycles that are up to seven times faster than regular DRAMs, providing faster operation and better multitasking. The device is reliable and stable, offering a long-term satisfactory performance.

The specific data is subject to PDF, and the above content is for reference

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