
Allicdata Part #: | MT53D1G64D8SQ-053WT:ETR-ND |
Manufacturer Part#: |
MT53D1G64D8SQ-053 WT:E TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 64G 1866MHZ |
More Detail: | SDRAM - Mobile LPDDR4 Memory IC 64Gb (1G x 64) 18... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 64Gb (1G x 64) |
Clock Frequency: | 1866MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.1V |
Operating Temperature: | -30°C ~ 85°C (TC) |
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Memory: MT53D1G64D8SQ-053 WT:E TR Application Field and Working Principle
The MT53D1G64D8SQ-053 WT:E TR is a type of memory device and is classified as a dynamic random-access memory (DRAM). It is a single-ported three-dimensional (3D) stacked volatile memory device, making it ideal for applications such as personal computers, data centers, gaming consoles, and embedded systems. It is a popular choice for its high performance, low power consumption and low latency.
The MT53D1G64D8SQ-053 WT:E TR is constructed with an 8 layer stack of logic and memory dies connected through Through-Silicon Vias (TSV). The 8 layers are arranged in alternating order with a logic die, followed by several memory dies. The memory dies functions as the storage capacity and the logic die passes the information via the TSVs to the memory layers. This construction, combined with the low power consumption and the low latency, makes the MT53D1G64D8SQ-053 WT:E TR a popular choice for applications such as personal computers, data centers, gaming consoles, and embedded systems.
One of the most important features of the MT53D1G64D8SQ-053 WT:E TR is its high performance. It provides a maximum speed of 2564MT/sec and a latency of 1.66ns. Due to the stacked construction, the overall size of the device is reduced, making it ideal for various applications where space is an issue. The low power consumption also makes it an attractive choice for applications where power efficiency is necessary.
The MT53D1G64D8SQ-053 WT:E TR also has advanced features such as power-management and error-correction codes. The power-managements allows for the device to automatically switch off when it is idle, thus reducing power consumption. The error-correction codes ensure data integrity and ensure accuracy in data transfer.
The device also has a wide range of applications in the embedded system industry. It is used in devices such as mobile phones, smartphones, tablets, game consoles, and automotive devices. The device is also used in versatile applications such as digital signal processing, image processing, video processing, and communication.
In conclusion, the MT53D1G64D8SQ-053 WT:E TR is an efficient and reliable device, which provides excellent performance and low power consumption. It is a versatile device that can be used for a variety of applications. It is an ideal choice for those looking for a memory device that offers high performance with low power consumption and low latency.
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MT53B256M32D1NP-062 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ FBGASD... |
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MT53B384M64D4TP-062 XT ES:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
MT53D512M32D2NP-046 AAT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
MT53D1024M32D4DT-046 AUT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZ FBGAS... |
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