MT53D384M32D2DS-053 XT:E

Series:	--
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	12Gb (384M x 32)
Clock Frequency:	1866MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	-30°C ~ 105°C (TC)

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Application Field of MT53D384M32D2DS-053 XT:E Memory

XT:E has a wide range of applications. It is primarily used in computing, both in data centers and for personal computing, as well as in consumer electronics, server systems, and automotive systems. It is particularly well-suited to applications that need fast data transfer rates, as well as improved reliability and thermal management. The high energy efficiency of XT:E makes it ideal for applications that require high memory density as well as chipset scalability.In computing, XT:E is suitable for data-intensive tasks such as artificial intelligence, machine learning, and 5G networks. In consumer electronics, the memory can be used in gaming, high-end imaging and multimedia applications. In automotive, XT:E can be used for advanced driver-assistance systems such as blind-spot detection and proximity warnings.

Working Principle of MT53D384M32D2DS-053 XT:E Memory

XT:E is based on Micron’s Silicon Modular Architecture (SMA) 3D memory technology. This technology utilizes a stackable cube-shaped design that allows for multiple layers of circuitry. By stacking the circuitry, XT:E can achieve a higher data density and faster speeds than traditional single-layer memory. The memory is composed of two distinct components: the connector layer and the logic layer. The logic layer is composed of logic cells, which are in turn composed of transistors. These logic cells form the core of the memory and are responsible for carrying out the desired operations on the data. The connector layer is responsible for connecting the logic cells and routing data between them. The XT:E architecture utilizes a data flow path structure to route data between the logic cells. This data flow path structure is composed of dedicated pass gates that are responsible for data routing. In addition, XT:E uses an optimized signal transmission mechanism to minimize signal delays between logic cells. The XT:E architecture can achieve faster speeds, better signal integrity and thermal management, and improved scalability compared to traditional memory architectures.

Conclusion

In conclusion, the MT53D384M32D2DS-053 XT:E is a high-performance, power-efficient 3D memory solution from Micron Technology. It has a wide range of applications in computing, consumer electronics, server systems, and automotive systems. The memory is based on the SMA 3D memory technology, which allows for increased data density and faster speeds compared to traditional single-layer memory. The XT:E architecture utilizes a data flow path structure and an optimized signal transmission mechanism to minimize signal delays and improve scalability.

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