Allicdata Part #: | MT53D512M32D2NP-046AAT:D-ND |
Manufacturer Part#: |
MT53D512M32D2NP-046 AAT:D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G 2133MHZ |
More Detail: | SDRAM - Mobile LPDDR4 Memory IC 16Gb (512M x 32) ... |
DataSheet: | MT53D512M32D2NP-046 AAT:D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 16Gb (512M x 32) |
Clock Frequency: | 2133MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.1V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Modern electronics have vastly increased the usage of digital memory. One such form of memory is the MT53D512M32D2NP-046 AAT:D. It is categorized as a type of dynamic random-access memory (DRAM).
MT53D512M32D2NP-046 AAT:D operates through the use of tiny capacitors stored directly on a microchip, with the charge being an indication of the stored data. Information is stored in the form of electrical charges, which are moved from and to a form of volatile storage such as RAM or registers within the CPU. MT53D512M32D2NP-046 AAT:D\'s are by far the most common type of memory used in today\'s electronics.
When applied to modern electronics, MT53D512M32D2NP-046 AAT:D is used to store information that can be recalled quickly and easily. It is used primarily in applications such as computer memory, displays, Artificial Intelligence (AI), and machine learning. Computer memory can be made up of several different types of memory, including RAM, cache memory, and MT53D512M32D2NP-046 AAT:D.
The primary advantage of the MT53D512M32D2NP-046 AAT:D type of memory is its ability to store a large amount of data in a relatively small space. This is due to the extremely small size of the individual capacitors, which are tens of times smaller than the least dense memory technologies currently available. This small size of the capacitors allows for more data to be stored in the same amount of space than other types of memory.
The working principle for MT53D512M32D2NP-046 AAT:D is based on the concept of capacitance. Capacitance is the ability to store a charge and the size of the charge can be manipulated by the size of the capacitor. When an electrical signal is applied to the capacitor, the state of the capacitor is changed. This charge is then used to store information, in the form of “cells,” allowing the capacitors to represent individual bits of data.
When data needs to be written to or read from the memory, the charge on the capacitor is adjusted using a pulse of electricity, known as a write pulse or read pulse. By reading and writing the charge on these capacitors, data can be moved in and out of the chip and stored in the memory. This is accomplished by cycling the data from a register in the CPU over the address bus, past the control circuitry in the memory, and back out of the memory and onto the data bus.
The write process for an MT53D512M32D2NP-046 AAT:D consists of a series of write pulses. During each pulse, a charge is applied to the capacitors and then removed, creating a change in the state of each capacitor. This allows the memory to store new data and possibly overwrite existing data. A read is accomplished by using a similar write pulse, but instead of changing the state of the capacitors, the change in the charge of the capacitor is detected and used to represent data.
MT53D512M32D2NP-046 AAT:D is an excellent example of high-speed memory technology. This type of memory has many advantages, such as its small size, fast read and write times, and low power consumption. As a result, it has found applications in many modern technologies, such as AI and machine learning, displays, computer memory and more. Its ease of use and cost effectiveness make it an excellent choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MT5365-UV | Marktech Opt... | 14.9 $ | 102 | EMITTER UV 367NM 5MM RADI... |
MT5355-UV | Marktech Opt... | 20.86 $ | 40 | EMITTER UV 357NM 5MM RADI... |
MT5375-UV | Marktech Opt... | 7.81 $ | 46 | EMITTER UV 378NM 5MM RADI... |
MT5375-UV-HP | Marktech Opt... | 27.94 $ | 9 | EMITTER UV HP 378NM 5MM R... |
MT5385-UV | Marktech Opt... | 2.87 $ | 142 | EMITTER UV 385NM 5MM RADI... |
MT53N-12 | 3M | 57.61 $ | 1000 | 3M PELTOR BOOM MICROPHON |
MT53H7A4600-NA | 3M | 280.67 $ | 1000 | 3M PELTOR LITE COM BRS T |
MT53H7P3EWS5 | 3M | 277.55 $ | 1000 | 3M PELTOR XP COMMUNICATI |
MT53H7AWS5 | 3M | 277.55 $ | 1000 | 3M PELTOR WS COMMUNI |
MT53H7P3E4600-NA | 3M | 280.67 $ | 1000 | ENHANCE EMPLOYEE SAFETY A... |
MT53H7B4600-NA | 3M | 280.67 $ | 1000 | 3M PELTOR LITE COM BRS T |
MT53H7BWS5 | 3M | 304.06 $ | 1000 | 3M PELTOR WS COMMUNICATI |
MT53B384M16D1Z0APWC1 | Micron Techn... | 0.0 $ | 1000 | IC SDRAM 6GBIT DIESDRAM -... |
MT53B384M16D1Z0AQWC1 | Micron Techn... | 0.0 $ | 1000 | IC SDRAM 6GBIT DIESDRAM -... |
MT53B384M64D4NZ-053 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
MT53B384M64D4NZ-053 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
MT53B512M32D2NP-062 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
MT53B512M64D4PV-053 WT ES:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
MT53B512M64D4PV-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
MT53B512M64D4PV-062 WT ES:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
MT53B512M64D4PV-062 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
MT53B256M64D2NL-062 XT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
MT53B256M64D2NL-062 XT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
MT53B256M64D2NL-062 XT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
MT53B2DANL-DC | Micron Techn... | 0.0 $ | 1000 | LPDDR4 16G 256MX64 FBGA D... |
MT53B192M32D1SG-062 WT ES:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 6G 1600MHZ FBGASD... |
MT53B256M32D1NP-062 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ 200FBG... |
MT53B256M32D1NP-062 WT ES:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ 200FBG... |
MT53B256M32D1NP-062 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ 200FBG... |
MT53B256M64D2NK-062 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
MT53B256M64D2NV-062 XT ES:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
MT53B256M64D2NV-062 XT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
MT53B384M64D4EZ-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
MT53B384M64D4EZ-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
MT53B384M64D4TP-062 XT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
MT53B4DAEZ-DC TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 24G 384MX64 FBGA Q... |
MT53B4DAPV-DC TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 32G 512MX64 FBGA Q... |
MT53B4DBEZ-DC TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 32G 512MX64 FBGA Q... |
MT53B4DCNK-DC TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 24G 384MX64 FBGA Q... |
MT53B512M32D2GZ-062 AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...