MT53D512M32D2NP-046 WT ES:E

Series:	--
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	16Gb (512M x 32)
Clock Frequency:	2133MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	-30°C ~ 85°C (TC)

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Introduction

MT53D512M32D2NP-046 WT ES:E is one of the most advanced DDR3 memory components. It is an SDRAM-based, 512 Megabit (Mb) DRAM device designed to meet the demands of high-performance computing, gaming, and embedded applications. It supports data transfer speeds of up to 1600Mbps, making it a suitable choice for either mainstream or high-end applications. In addition, the device operates at low voltage and uses advanced Low Power Notifications (LPNs) for power management for improved power efficiency.

Application Field

MT53D512M32D2NP-046 WT ES:E is a highly advanced DDR3 memory component, providing versatile solutions for a wide range of applications. It is suitable for use in high-performance computing solutions such as servers, workstations, and gaming devices. It can also be used as an effective and reliable storage medium for data-intensive workloads. In addition, its low voltage and power efficient design makes it an ideal choice for applications that require long-term reliability and durability.MT53D512M32D2NP-046 WT ES:E is also well-suited for embedded systems such as embedded sensors, drones, automotive applications, and machine vision systems. In such applications it can be used to reliably store data even in harsh conditions.

Working Principle

MT53D512M32D2NP-046 WT ES:E is a highly advanced DRAM component based on the SDRAM technology. It supports up to 1600Mbps data transfer rates, which is significantly higher than the transfer rates of DDR2 components. This higher transfer rate requires less power and produces lower latency, making it more efficient and faster than other components.In addition, its low power notifications (LPNs) make for an efficient design in power management. LPNs enable the component to reduce the amount of power it consumes when idle, thus improving its energy efficiency.MT53D512M32D2NP-046 WT ES:E also operates at low voltage, making it an ideal choice for applications where power consumption needs to be kept low. This, in turn, allows for a longer life span since it does not generate a large amount of heat, making it highly reliable and durable.Finally, MT53D512M32D2NP-046 WT ES:E is designed to handle a wide range of operating conditions. This allows it to offer a high level of reliability even when subjected to extreme temperatures and clock frequencies.

Conclusion

MT53D512M32D2NP-046 WT ES:E is a highly advanced DDR3 memory component. It is well-suited for a wide variety of applications due to its high data transfer rates, low power consumption, low voltage operation, and high reliability. Furthermore, its efficient design in power management makes it an ideal choice for applications that require an extended lifespan.

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