| Allicdata Part #: | MT53D6DABE-DC-ND |
| Manufacturer Part#: |
MT53D6DABE-DC |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | SPECIAL/CUSTOM LPDDR4 |
| More Detail: | Memory IC |
| DataSheet: | MT53D6DABE-DC Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Active |
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MTD53D6DABE-DC is a type of semiconductor memory manufactured by Micron Semiconductor. It is a double data rate (DDR) memory chip, with a data access rate of up to 8 Gbps. The chip provides high-speed memory access, along with data integrity and signal integrity assurance. It also offers high-speed IO, allowing for fast data transfer between the device and the system. The MTD53D6DABE-DC provides a wide range of memory applications, from high-performance embedded systems and gaming applications, to large-scale server and communication applications.
The MTD53D6DABE-DC is designed for data-intensive applications. It has a high transfer rate of 8 Gbps, making it well-suited for applications that require high speed data transfer. It also has a low power consumption and is capable of handling large data sets. The device also has a programmable memory interface, allowing for a wide range of customizations.
The MTD53D6DABE-DC is a non-volatile memory device. It stores data even when power is lost and is capable of retaining data even when the power supply is interrupted. This makes it ideal for application areas such as embedded systems and industrial control systems where data storage and retrieval may be interrupted or delayed due to power outages or other types of disruptions.
The device has a user-programmable endurance rating of up to 200,000 write/erase cycles, making it suitable for applications that require frequent data access and/or modification. It is also capable of providing an interrupt action when data is written or erased, allowing the system to take further action when necessary.
The MTD53D6DABE-DC memory chip is able to support both synchronous and asynchronous data transfers. In a synchronous transfer, data will be transmitted at a fixed rate and remain in synchronization with the memory\'s clock. Asynchronous transfers, on the other hand, take place over a wider range of frequencies and can allow for more flexibility in transmitting data.
The MTD53D6DABE-DC utilizes Error Correction Code (ECC) to ensure data integrity. It is capable of detecting, correcting and reporting errors in data transmitted over the memory interface. By detecting and correcting errors, the device can help ensure that data is not corrupted or lost during transfer.
The MTD53D6DABE-DC is an ideal choice for embedded systems, gaming applications and other memory intensive applications. Its high speed data transfer and data integrity assurance make it well-suited for these applications. It is also capable of providing long-term data retention, making it an ideal choice for power sensitive applications. The wide variety of customizations it offers make it flexible enough to be used in a broad range of applications and environments.
The specific data is subject to PDF, and the above content is for reference
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MT53D6DABE-DC Datasheet/PDF