| Allicdata Part #: | MTA4ATF25664AZ-2G6B1-ND |
| Manufacturer Part#: |
MTA4ATF25664AZ-2G6B1 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 16G PARALLEL 1333MHZ |
| More Detail: | SDRAM - DDR4 Memory IC 16Gb (256M x 64) Parallel 1... |
| DataSheet: | MTA4ATF25664AZ-2G6B1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - DDR4 |
| Memory Size: | 16Gb (256M x 64) |
| Clock Frequency: | 1333MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.2V |
| Operating Temperature: | 0°C ~ 95°C (TC) |
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Memory is an integral part of processors. Without its correct functioning, all data computing and processing functions would be impeded. The memory chip, MTA4ATF25664AZ-2G6B1, provides a high density, low-cost integrated solution for a wide variety of applications. Its unique characteristics such as fast access rate, low power consumption, and small form factor make it ideal for use in desktop and laptop computers, consumer electronics and automotive systems. Let us take an in-depth look at the application field and working principle of the MTA4ATF25664AZ-2G6B1 memory chip.
MTA4ATF25664AZ-2G6B1 is a Memory Technology Device (MTD) developed by the American integrated circuit (IC) designer, Memory Technology Inc. It features 256 megabit (Mb) DDR3 synchronous dynamic random access memory (SDRAM) and is housed in a 48-pin vFBGA208 package. It is designed to operate at up to 1833 MT/s and has a power supply voltage of 1.8V. This memory chip is backward compatible with slower DDR2 and DDR3 memories and also supports 3.3V IO supply. The chip is designed for optimal performance in servers, high-end PCs and embedded devices.
Due to its compact size and high data throughput, the MTA4ATF25664AZ-2G6B1 is suitable for use in a multitude of application fields, including but not limited to:
- Industrial automation
- Data storage systems
- PCs and laptops
- Mobile phones and tablets
- Gaming consoles
- Servers
- Network systems
- Robotics
- Embedded devices
The MTA4ATF25664AZ-2G6B1 memory chip uses a double data rate (DDR) architecture which allows for faster data transfer speeds than conventional SDRAM modules. The double data rate architecture also reduces power consumption by providing more efficient signal processing and improves memory latency. The chip supports up to eight independent memory banks and has error correcting code support to prevent data corruption.
The working principle behind the MTA4ATF25664AZ-2G6B1 is based on the concept of "memory locations." Each individual location contains a bit or byte of data. Memory locations are addressed and accessed by their addresses. The memory controller is responsible for directing data and instructions to the appropriate memory location for subsequent processing.
When a certain address is selected, the memory controller sends a request signal to the memory chip, which in turn initiates the necessary procedures for accessing the requested data or instructions. The controller then starts a series of clock cycles one after the other to move data and instructions from one memory address to another. Once the process is complete, the memory chip sends an acknowledge signal back to the controller, indicating the completion of the memory access.
The MTA4ATF25664AZ-2G6B1 has several other features to ensure fast and efficient access to data. The chip utilizes an array of advanced timing algorithms known as burst and burst interrupted (BI) to reduce memory access times. It also has a data-out timing system, a data-out recovery system, and a write leveling system, all of which ensure the accuracy of data retrieval. This memory chip is also endowed with a dynamic refresh circuit which helps maintain the integrity of the data stored in its memory cells.
In summary, the MTA4ATF25664AZ-2G6B1 is a highly efficient and reliable memory chip that is designed to provide fast and reliable access to data in a variety of applications. Its low power consumption and high speeds make it a popular choice for high performance applications in embedded electronics and robotics. The chip has several features such as error correcting code, dynamic refresh, and fast data-out recovery that are designed to ensure the integrity of data stored in the memory cells.
The specific data is subject to PDF, and the above content is for reference
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MTA4ATF25664AZ-2G6B1 Datasheet/PDF