MTA4ATF51264HZ-2G1B1 Allicdata Electronics
Allicdata Part #:

MTA4ATF51264HZ-2G1B1-ND

Manufacturer Part#:

MTA4ATF51264HZ-2G1B1

Price: $ 35.27
Product Category:

Memory Cards, Modules

Manufacturer: Micron Technology Inc.
Short Description: MODULE DDR4 SDRAM 4GB 260SODIMM
More Detail: Memory Module DDR4 SDRAM 4GB 2133MT/s 260-SODIMM
DataSheet: MTA4ATF51264HZ-2G1B1 datasheetMTA4ATF51264HZ-2G1B1 Datasheet/PDF
Quantity: 1000
100 +: $ 32.06390
Stock 1000Can Ship Immediately
$ 35.27
Specifications
Series: --
Part Status: Obsolete
Memory Type: DDR4 SDRAM
Memory Size: 4GB
Speed: 2133MT/s
Package / Case: 260-SODIMM
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MTA4ATF51264HZ-2G1B1 is a high-performance memory module that is frequently used in a number of application fields. It is primarily used for applications such as caching, buffering, and virtualized memory. The module is designed to allow for high throughput and low latency, making it an ideal choice for applications that require quick access to data.

The module utilizes DDR4 dual-channel memory, which allows for fast and efficient data transfer. The DDR4 architecture provides the highest-density memory, with up to 32GB of memory per module. In addition, the module capabilities can be enhanced further through its Error Correction Code (ECC) support, which increases the reliability and accuracy of data reads and writes.

The MTA4ATF51264HZ-2G1B1 is a dual-channel memory module. This allows the module to be split into two independent channels, which can then be used to simultaneously run tasks independently. The module’s architecture allows for a degree of scalability, as the capacity of the module can be expanded by adding additional chips or DIMMs.

The module also employs a number of advanced technologies, such as High Bandwidth Memory (HBM). HBM is a DRAM technology that provides the highest bandwidth and the highest capacity of any DRAM technology. HBM utilizes stacked DRAM chips that are interconnected using a combination of signals and interconnects, allowing the module to offer high throughput, low latency, and high-bandwidth memory.

In addition to offering high throughput and low latency, the MTA4ATF51264HZ-2G1B1 also works to reduce the power and thermal requirements of the system. The module is able to achieve this through its advanced power and thermal management technologies, such as Dynamic Voltage Management and Advanced Dynamic Thermal Management.

The module also provides support for several Intel technologies, such as Intel Optane memory. This technology allows the module to provide enhanced responsiveness through the use of a caching solution that increases read and write performance. In addition, Intel Optane memory also helps to reduce the memory overhead and latency associated with memory access.

The MTA4ATF51264HZ-2G1B1 makes use of several advanced technologies, allowing it to offer superior performance and reliability. Along with providing a high-performance memory solution, it also reduces power consumption and thermal requirements, making it an ideal choice for applications that need to support large capacities of data. Additionally, the module also utilizes advanced power and thermal management technologies, ensuring that the system remains cool and efficient even under heavy load conditions.

The specific data is subject to PDF, and the above content is for reference

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