MTA4ATF51264AZ-2G6H1

The MTA4ATF51264AZ-2G6H1 is a multi-application, dynamic random access memory (DRAM) module. It is used in applications such as high-performance computing, embedded systems, networking and storage, autonomous vehicles, and digital audio/video. It is suitable for both consumer and industrial applications.

The MTA4ATF51264AZ-2G6H1 is an advanced DRAM module designed to provide reliable, high performance and low-power memory solutions in multi-function applications. It utilizes a unique technique called Off-Chip Xtreme-Density (OCXD), which allows a single memory controller to access multiple DRAM chips on a single board. This allows the MTA4ATF51264AZ-2G6H1 to achieve optimal performance and power efficiency in multi-function applications.

The MTA4ATF51264AZ-2G6H1 has a total memory density of 2GB and a single operating frequency of 800MHz – the maximum power consumption is a mere 7W. The module supports high-speed data transfer rates of up to 3300MT/s and is backward compatible with DDR3 and DDR4 DRAM standards. It features error correction code (ECC) for increased data integrity, and a data bus inversion feature for improved signal quality in multi-function systems.

The MTA4ATF51264AZ-2G6H1 is designed to provide high levels of system performance, reliability and scalability. It is capable of supporting up to 8 million virtual channels, advanced address mapping, and DMA-based transfers of data. The combination of large capacity, high speed and low power consumption make the MTA4ATF51264AZ-2G6H1 an ideal choice for numerous applications.

In terms of working principle, the MTA4ATF51264AZ-2G6H1 uses a four-chip memory architecture. This design enables simultaneous access to multiple DRAM chips, and allows for increased performance and higher system reliability. It uses an advanced DDR4 memory controller to manage data flow between the DRAM chips and the processor, and to ensure that data integrity is maintained. The DRAM chips are connected to the memory controller via a 4-bit bus with a maximum transmission rate of 3200MT/s.

The MTA4ATF51264AZ-2G6H1 is a reliable, high-performance memory solution that can provide increased system performance for a variety of applications. Its high speed and large capacity make it suitable for use in consumer and industrial applications, while its low power consumption allows for more efficient and sustainable operations. Furthermore, its four-chip memory architecture ensures simultaneous access to multiple DRAM chips and increased system reliability. The MTA4ATF51264AZ-2G6H1 is a suitable solution for users looking for a reliable and high-performance memory module.