MTA4ATF51264HZ-3G2E1

Series:	--
Part Status:	Active
Memory Type:	DDR4 SDRAM
Memory Size:	4GB
Speed:	3200MT/s
Package / Case:	260-SODIMM

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MTA4ATF51264HZ-3G2E1: Application Field and Working Principle

MTA4ATF51264HZ-3G2E1 is a memory module manufactured by Micron Technology. It is a dual in-line memory module (DIMM) with an integrated 256-bit DDR3 Synch DRAM. It is used primarily as a high-speed memory solution for servers and other computing systems. The module includes eight 64M x 4 bits (256MB) synchronous dynamic RAMs (SDRAMs) and offers up to 64GB of maximum onboard capacity.

Applications

MTA4ATF51264HZ-3G2E1 is an ideal choice for server applications that require high-performance, high-capacity memory solutions. It is commonly used in compute-intensive environments such as gaming servers, virtualization and hypervisor servers, as well as systems for scientific analysis and data-intense applications. It is also used in enterprise and cloud computing systems.

Working Principle

The MTA4ATF51264HZ-3G2E1 module works by connecting memory chips to the host computer\'s processor or memory controller. Each DIMM includes eight DDR3 DRAMs, with each DRAM capable of storing 64M x 4 bits of data. The DRAM works by having a row of bits connected to the controller, and then a column of bits connected to the controller. When a read or write operation is initiated, the memory controller sends a signal to the memory module to select the corresponding row and column addresses. The memory module then sends the data to or from the designated address. The module also includes a Serial Presence Detect (SPD) chip that is used to inform the memory controller of the specific module characteristics, such as the number of ranks and banks, as well as the type and size of the DRAMs. This helps the memory controller to accurately read and write data to the memory module.

Bow Out Voltage

MTA4ATF51264HZ-3G2E1 modules use the Bow Out Voltage (Vddq) to maintain the highest level of signal integrity and performance when the memory module is running at very high speeds. The Bow Out Voltage is the voltage applied to the memory module by the memory controller. It works by ensuring the correct minimum and maximum voltage levels are maintained when the signals are sent and received between the memory module and the memory controller. This is important because it ensures that the memory controller can accurately read and write data to the memory module.

Power Management

The module also includes several power management features to ensure that the memory module consumes minimal power. It includes several low-power modes, such as Self Refresh, clock gating, and power-down. Self Refresh is a power management mode that allows the module to conserve power by automatically refreshing only the rows that contain data. Clock gating is another low-power feature that stops the clock signal from being sent to the DRAM when not in use. The Power-Down mode is enabled when the module is not in use and allows the module to enter into a low-power state and further reduce power consumption.

Conclusion

MTA4ATF51264HZ-3G2E1 is an ideal memory module for high-performance, high-capacity memory solutions. It offers several features such as Bow Out Voltage, low-power modes, and a Serial Presence Detect chip that allows for accurate data transmission between the memory module and the memory controller. Moreover, its wide range of applications make it ideal for server applications that require fast, efficient storage and retrieval of data.

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