
Allicdata Part #: | MTZJT-7722B-ND |
Manufacturer Part#: |
MTZJT-7722B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 22V 500MW MSD |
More Detail: | Zener Diode 22V 500mW ±3% Through Hole MSD |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 22V |
Tolerance: | ±3% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 200nA @ 17V |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AG, DO-34, Axial |
Supplier Device Package: | MSD |
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MTZJT-7722B is an equation Zener diode designed primarily for voltage regulation and precision reference shunt applications. These devices feature low leakage, high regulation accuracy, true rectifying properties, and fast switching characteristics.
The device is internally constructed as a normal diode with an additional Zener region operated in the reverse biased voltage mode. This property places the device into a voltage-controlled resistance state, similar to a transistor’s connection parameters, when the reverse voltage is applied. As the applied reverse voltage increases, the device’s internal resistance decreases, thus causing a decrease in the dynamic resistance of the device.
In its application field, MTZJT-7722B can be used as a voltage detector or as a shunt regulator. When used as a voltage detector, the device can be used to detect an overvoltage condition automatically, then activate a circuit protection device, such as a shunt regulator, to maintain a stable voltage, or to shut down power if the overvoltage condition persists. As a shunt regulator, the device can be used to regulate a system voltage, or to maintain a voltage supply below a certain given level. It can also be used to provide greater stability to the system, maintain a constant output voltage, and provide greater insulation from voltage transients.
The working principle of the MTZJT-7722B is based on the physical phenomenon of avalanche breakdown in a diode. When a reverse voltage is applied to the diode, it will start to break down at a certain voltage, known as the avalanche voltage. This is due to the generation of electron-holes pairs caused by the high electric field inside the device.
As the avalanche voltage increases, the reverse current through the diode increases exponentially. This leads to a decrease in the resistance of the device, which in turn causes a decrease in the dynamic resistance of the device. With the decrease in the dynamic resistance, the output voltage of the shunt regulator is also regulated and kept constant.
In short, MTZJT-7722B is an equation Zener diode designed primarily for voltage regulation and precision reference shunt applications. It employs a normal diode structure along with an additional Zener region in the reverse biased mode. This allows the device to function as a voltage regulator and provide greater stability to a system, maintain a constant output voltage, and provide greater insulation from voltage transients.
The specific data is subject to PDF, and the above content is for reference
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