MTZJT-723.3B Allicdata Electronics
Allicdata Part #:

MTZJT-723.3B-ND

Manufacturer Part#:

MTZJT-723.3B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 3.3V 500MW DO34
More Detail: Zener Diode 3.3V 500mW ±3% Through Hole MSD
DataSheet: MTZJT-723.3B datasheetMTZJT-723.3B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±3%
Power - Max: 500mW
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: MSD
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MTZJT-723.3B is a diode-type Zener single part from the series of MTZJT-723.3B. It is designed for short pulse applications. It is suitable for high frequency discretes and can offer superior performance when it comes to switching, rectification and filtering. Zener diodes are special diodes that are used in analog and digital circuits to provide a predetermined voltage level. Generally, the current flowing through a zener diode is stable regardless of the voltage changes in the circuit. The MTZJT-723.3B is a low power zener diode, meaning that it dissipates less power than most other zener diodes.When using the MTZJT-723.3B, you need to understand the different specifications. The standard package size is 8-pin and the maximum reverse power dissipation is 1.6 watts. The maximum reverse voltage is 100 volts and the maximum forward voltage is 3 volts. The maximum forward current is 1.5 amps and the maximum capacitance is 0.01pF. The maximum reverse leakage current is 100mA. The maximum forward surge current is 20A and the temperature range is -55C to 80C.The MTZJT-723.3B offers several advantages over other zener diodes. These include better protection of over voltage, high isolation voltage and prevention of inputted noise. This makes the MTZJT-723.3B well suited for applications such as switching, pulsed power, surge protection, polarity protection and clamping.The MTZJT-723.3B also operates with a reverse breakdown voltage, which is determined depending on the temperature at which it is operating. When the diode has a lower temperature than the breakdown voltage, the current flowing through it decreases as the temperature goes up. This reverses when the temperature rises above the breakdown voltage.A zener diode has two distinct operating states. The first of these is its ‘open’ state – the voltage difference has to be at least the specified breakdown voltage for the diode to conduct. When the diode is in this ‘open’ state, it can take a lot of current due to the high resistance of the material. The second state of a zener diode is its ‘closed’ state, when it starts to conduct. When this happens, the voltage across the diode is limited and a ‘reverse breakdown’ occurs. The reverse breakdown rating of the MTZJT-723.3B is 100 volts.Thus, the MTZJT-723.3B is a good choice for application fields including high frequency rectification and surge protection. Its key advantages include the low power dissipation, the low forward current and the high breakdown voltage. With these features, the MTZJT-723.3B is an ideal choice for applications that require high speed and reliability.

The specific data is subject to PDF, and the above content is for reference

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