| Allicdata Part #: | MTZJT-7710B-ND |
| Manufacturer Part#: |
MTZJT-7710B |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | DIODE ZENER 10V 500MW MSD |
| More Detail: | Zener Diode 10V 500mW ±3% Through Hole MSD |
| DataSheet: | MTZJT-7710B Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Voltage - Zener (Nom) (Vz): | 10V |
| Tolerance: | ±3% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 20 Ohms |
| Current - Reverse Leakage @ Vr: | 200nA @ 7V |
| Operating Temperature: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AG, DO-34, Axial |
| Supplier Device Package: | MSD |
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The MTZJT-7710B is a single Zener diode from Vishay Intertechnology, Inc. It is capable of handling up to 15A of forward current. It features a low reverse leakage characteristic and has a wide operating temperature range from -55 °C to +175 °C. The MTZJT-7710B is suitable for use in high-voltage rectifiers, regulation circuits and voltage-clamping applications.
The MTZJT-7710B is a P-type semiconductor device. It consists of an N-type doping layer and a P-type doping layer. When forward bias voltage is applied to the MTZJT-7710B, the electrons and holes move to the bipolar junction and create a rectifying current through the device. The current flow is limited by the depletion region formed by the P-N junction. This prevents excessive current from flowing between the P-type and N-type layers, keeping the device in a stable operating state.
When a reverse bias voltage is applied to the MTZJT-7710B, current does not flow. However, if the reverse bias voltage exceeds the Zener breakdown voltage, a current will start to flow due to the Zener effect. This current is called the Zener current and is controlled by the Zener voltage. The Zener voltage of the MTZJT-7710B is 48V. This means that when the applied reverse bias voltage exceeds 48V, the MTZJT-7710B will start to conduct in the reverse direction.
The MTZJT-7710B is most commonly used in high-voltage rectification circuits and voltage-clamping applications. In rectification circuits, the device is used to rectify AC voltage and convert it into DC voltage. In voltage-clamping applications, the device is used to provide over voltage protection. When the applied voltage exceeds the Zener voltage of the diode, the diode will conduct in the reverse direction and clamp or limit the voltage.
The MTZJT-7710B is well suited for use in high-power, low-loss and high-temperature applications. It features a low reverse leakage current, which ensures efficient operation and a wide operating temperature range (-55 °C to +175 °C). The device also has a low forward voltage drop, which makes it a good choice for AC-DC conversion and voltage clamping applications.
The MTZJT-7710B is a high-performance single Zener diode from Vishay Intertechnology, Inc. It features a low forward voltage drop and a high reverse leakage characteristic. It is suitable for use in high-voltage rectification circuits, regulation circuits and voltage-clamping applications. The device has a wide operating temperature range and is well suited for use in high-power, low-loss and high-temperature applications.
The specific data is subject to PDF, and the above content is for reference
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| MTZJ7V5SC R0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE ZENER 7.48V 500MW D... |
| MTZJ27SB R0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE ZENER 25.62V 500MW ... |
| MTZJ33SA R0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE ZENER 30.45V 500MW ... |
| MTZJ7V5SA R0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE ZENER 7.04V 500MW D... |
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MTZJT-7710B Datasheet/PDF