MUR1100EG Allicdata Electronics
Allicdata Part #:

MUR1100EGOS-ND

Manufacturer Part#:

MUR1100EG

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE GEN PURP 1KV 1A AXIAL
More Detail: Diode Standard 1000V 1A Through Hole Axial
DataSheet: MUR1100EG datasheetMUR1100EG Datasheet/PDF
Quantity: 7426
1 +: $ 0.32760
10 +: $ 0.27909
100 +: $ 0.20853
500 +: $ 0.16386
1000 +: $ 0.12662
Stock 7426Can Ship Immediately
$ 0.36
Specifications
Series: SWITCHMODE™
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: MUR1100
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MUR1100EG is a diode-type rectifier with a single Schottky type construction. It is designed to provide efficient, low-voltage rectification in applications such as home appliances, small motors and automotive electronics.

The MUR1100EG is a Schottky diode constructed of an N-type semiconductor material. The diode consists of an N-type semiconductor layer and a Schottkymetal layer, which is connected to the N-type semiconductor layer. The Schottkymetal layer is the anode electrode and the N-type semiconductor layer is the cathode electrode. This type of diode can provide the highest levels of efficiency and stability in low-voltage applications.

The working principle of the MUR1100EG is based on the Schottky effect, a quantum mechanical effect associated with the injection of electrons from a metal surface into a semiconductor. When a negative voltage is applied to the Schottkymetal layer (anode), electrons are injected into the N-type semiconductor layer (cathode) from the Schottkymetal layer, thereby creating a rectangular current–voltage relationship between the anode and the cathode. This rectangular current–voltage relationship is the foundation of rectifier performance and the MUR1100EG provides this with fast recovery and low leakage current.

The MUR1100EG can be used in a wide range of applications such as power line filtering, power optimization, solid-state relays and many others. Its low leakage current and fast recovery rate make it ideal for use in applications that require a high degree of power efficiency. Additionally, the diode\'s low voltage rating makes it suitable for use in low-voltage applications.

The MUR1100EG is a reliable, high-performance diode rectifier designed for use in a variety of applications. Its fast recovery time, low leakage current and low voltage rating make it an ideal solution for applications that require efficient, low-voltage rectification.

The specific data is subject to PDF, and the above content is for reference

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