MUR160AHA0G

Series:	Automotive, AEC-Q101
Packaging:	Tape & Box (TB)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	600V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	1.25V @ 1A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	5µA @ 600V
Capacitance @ Vr, F:	27pF @ 4V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Operating Temperature - Junction:	-55°C ~ 175°C

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The MUR160AHA0G is a high-performance rectifier diode that enables robust power systems to be built with functionality and reliability. It is a single diode featuring a forward voltage drop of 0.75V with a maximum reverse current of 1mA. It also features a high-voltage capability of 800V with an avalanche energy rating of 11J.This high performance diode is suitable for a variety of AC and DC applications, including power supplies, AC-DC converters, automotive power systems, telecommunication systems, and general-purpose rectification. Its low on-state voltage, combined with its ability to handle high peak currents, makes it an excellent choice for switching applications as well.Because of its high-voltage capability and low power dissipation, it is also particularly suitable for high-voltage applications, such as lighting equipment, motor drives, and other power systems in industrial and consumer applications. Additionally, its low-leakage current and fast recovery from the reverse breakdown voltage make the MUR160AHA0G suitable for high-speed switching applications.The working principle of the MUR160AHA0G is simple. When a forward bias voltage is applied, it allows electron flow in one direction (forward bias), while at the same time blocking current flow in the opposite direction (reverse bias). This is known as the rectifying action of a diode, which is why it is referred to as a rectifier diode.The MUR160AHA0G is made up of a semiconductor material, normally silicon or germanium, which is sandwiched between two very thin layers of metal or alloy components. These layers, known as the anode and cathode, act as the terminals for the diode. When a forward bias voltage is applied, the thin layers allow electrons to flow freely, while blocking current in the reverse direction. This allows the diode to act as a one-way switch that redirects the current to the appropriate area.The MUR160AHA0G has excellent surge capability, temperature stability, and frequency response performance. It is a low-power rectifying device, capable of providing up to 800V of forward bias voltage and 1mA of reverse current. Its low reverse breakdown voltage and fast recovery time enable it to be used in high-speed switching applications. Its wide operating temperature range, low forward voltage drop, low leakage current, double-diffused construction, and low reverse current makes the MUR160AHA0G an ideal choice for many DC and AC applications.In conclusion, the MUR160AHA0G is a robust, high-performance single diode with a broad range of applications. It is ideal for switching, motor control, and other power systems in industrial and consumer applications. Its low-power dissipation, high-voltage capability, and low leakage current make it suitable for high-frequency switch applications, while its low on-state voltage and fast recovery from the reverse breakdown voltage make it an excellent choice for high-speed switching applications.

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