Allicdata Part #: | MUR420GP-TP-ND |
Manufacturer Part#: |
MUR420GP-TP |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 200V 4A DO201AD |
More Detail: | Diode Standard 200V 4A Through Hole DO-201AD |
DataSheet: | MUR420GP-TP Datasheet/PDF |
Quantity: | 1000 |
1200 +: | $ 0.19051 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.35V @ 4A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 60ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | MUR420 |
Description
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MUR420GP-TP Application Field and Working Principle
Introduction
The MUR420GP-TP is a high current averaged, high-voltage single diode-rectifier bridge. It is generally used in switched-mode power supplies, battery chargers, inverters, and other power management applications. The average current rating of the rectifier is 40A, while the max operating temperature is 125℃. Additionally, the peak repetitive reverse voltage of the MUR420GP-TP is 420V and the surge count is up to 100A. The device consists of four high-voltage Schottky barrier rectifier junctions connected in series.Application Field
The MUR420GP-TP has a wide range of applications in power management and high-current average charging and conversion tasks. The most commonly used applications for the MUR420GP-TP include:- Battery Charger
- Switched-mode Power Supplies
- Inverter
- Solar Panels Charging
Working Principle
The working principle of the MUR420GP-TP is quite simple and straightforward. The device consists of four FDSchottky barrier rectifier junctions connected in series. This configuration effectively forms a bridge-type diode rectifier bridge. When reverse biased, electrons are injected into the external circuit by the Schottky junctions, creating a current flow. When forward biased, the electrons are pulled back into the same Schottky junctions and the current flow is reversed.In general, the Schottky barrier under reverse bias is lower than when it is under forward bias. This allows for higher efficiency in power management applications where less power is lost during conversion from AC to DC. Furthermore, the device can operate up to 125℃, which makes it one of the best suited for high-temperature environments.Conclusion
The MUR420GP-TP is a single diode-rectifier bridge that is used in power management and high-current average charging and conversion tasks. It consists of four high-voltage Schottky barrier rectifier junctions connected in series. This configuration allows the MUR420GP-TP to operate up to 125℃ while providing increased efficiency in power conversion tasks from AC to DC. As such, it is an excellent choice for high current power management applications that require high accuracy and proficiency.The specific data is subject to PDF, and the above content is for reference
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MUR440S R7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 400V 4A DO... |
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MUR460S V7G | Taiwan Semic... | -- | 850 | DIODE GEN PURP 600V 4A DO... |
MUR420RLG | ON Semicondu... | 0.13 $ | 39000 | DIODE GEN PURP 200V 4A DO... |
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