MUR460-TP Discrete Semiconductor Products |
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Allicdata Part #: | MUR460-TPMSTR-ND |
Manufacturer Part#: |
MUR460-TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 600V 4A DO201AD |
More Detail: | Diode Standard 600V 4A Through Hole DO-201AD |
DataSheet: | MUR460-TP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.35V @ 4A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 60ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | MUR460 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MUR460-TP is a single rectifier diode, which also comes in a tumble &-proof plastic package. It’s designed for applications with low forward current and leakage current. The MUR460-TP diode guarantees excellent performance in the junction temperature range of -55 oC to +150 oC and provides maximum power dissipation.
The MUR460-TP is composed of an n-type P+-emitter layer and a p-type n-collector layer that are separated by an intrinsic layer. This type of diode allows current to flow from the anode to the cathode when reverse bias is applied, and is prevented from flowing in the opposite direction because the transistor becomes forward biased. This diode has a maximum repetitive peak reverse voltage of 600V and a maximum non-repetitive peak surge current rating of 8.3A.
The working principle of the MUR460-TP rectifier diode is relatively simple. When the diode is in the forward bias mode, current flows from its anode to its cathode. This current is then allowed to pass through the diode and is used to power the load. On the other hand, when the diode is in its reverse bias mode, the current will be inhibited and no current allowed to pass through. This is because when a reverse voltage is applied to the diode’s anode and cathode, the voltage on the intrinsic layer is increased, thus preventing current from passing through. Therefore, the MUR460-TP can be used as a high-efficiency diode to either direct or block the current.
This diode is used in a variety of applications due to its small size and excellent performance. Some of its typical uses include automotive alternators, AC-DC voltage converters, battery chargers, UPS systems and adjustable speed drives. It is also extremely reliable and can operate in harsh environments, such as when exposed to high temperature and humidity or significant exposure to shock and vibration.
The MUR460-TP single rectifier diode has revolutionized the field of power electronics, offering excellent performance and reliability for a wide range of applications. Its maximum repetitive peak reverse voltage of 600V and maximum non-repetitive peak surge current rating of 8.3A make it ideal for low forward current and leakage current applications. Its small size, high efficiency and robust design also make it an ideal choice for applications where space and/or weight are an issue.
The MUR460-TP single rectifier diode is an incredibly valuable tool in the field of power electronics, and its versatility and reliability mean it will continue to have a place in the market for years to come. As technology advances, so too will the performance and reliability of the MUR460-TP diode.
The specific data is subject to PDF, and the above content is for reference
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MUR460S R7G | Taiwan Semic... | -- | 850 | DIODE GEN PURP 600V 4A DO... |
MUR420 A0G | Taiwan Semic... | 0.22 $ | 500 | DIODE GEN PURP 200V 4A DO... |
MUR420-E3/54 | Vishay Semic... | -- | 4200 | DIODE GEN PURP 200V 4A DO... |
MUR480ERLG | ON Semicondu... | 0.18 $ | 1500 | DIODE GEN PURP 800V 4A AX... |
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MUR415RLG | ON Semicondu... | 0.13 $ | 1500 | DIODE GEN PURP 150V 4A AX... |
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MUR460-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 4A DO... |
MUR460SHR7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 600V 4A DO... |
MUR480-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 4A DO... |
MUR420S R7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 200V 4A DO... |
MUR440S R7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 400V 4A DO... |
MUR440S V7G | Taiwan Semic... | 0.14 $ | 850 | DIODE GEN PURP 400V 4A DO... |
MUR420S V7G | Taiwan Semic... | 0.14 $ | 850 | DIODE GEN PURP 200V 4A DO... |
MUR460S V7G | Taiwan Semic... | -- | 850 | DIODE GEN PURP 600V 4A DO... |
MUR420RLG | ON Semicondu... | 0.13 $ | 39000 | DIODE GEN PURP 200V 4A DO... |
MUR460RLG | ON Semicondu... | -- | 30000 | DIODE GEN PURP 600V 4A DO... |
MUR4100ERLG | ON Semicondu... | 0.2 $ | 9000 | DIODE GEN PURP 1KV 4A DO2... |
MUR440-M3/73 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 400V 4A DO... |
MUR460-M3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 4A DO... |
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MUR420-M3/73 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
MUR420-M3/54 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
MUR4L20 A0G | Taiwan Semic... | 0.17 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
MUR4L40 A0G | Taiwan Semic... | 0.17 $ | 1000 | DIODE GEN PURP 400V 4A DO... |
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MUR420 R0G | Taiwan Semic... | 0.17 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
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