MURA115T3G Allicdata Electronics
Allicdata Part #:

MURA115T3GOSTR-ND

Manufacturer Part#:

MURA115T3G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE GEN PURP 150V 2A SMA
More Detail: Diode Standard 150V 2A Surface Mount SMA
DataSheet: MURA115T3G datasheetMURA115T3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.06951
10000 +: $ 0.06503
25000 +: $ 0.05980
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 150V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: MURA115
Description

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Diodes are semiconductor elements that allow current to flow in one direction only, while blocking the current in the opposite direction. Single rectifiers, in particular, make up a major category of diodes. The MURA115T3G is one such type of single rectifier, widely used for computer, communication and industrial loads.

This device is capable of withstanding a wide range of operating conditions, making it suitable for applications that involve low-frequency interruptions, rectification of alternating currents, and protection from overvoltage. Additionally, its 100 PIV minimum breakdown voltage rating makes it suitable for systems requiring a high electrical breakdown.

The MURA115T3G has a low leakage current of 100µA which ensures it can perform in an incredibly wide temperature range. Its 25A repetitive peak reverse current (Irrm) makes it suitable for applications requiring high current reversals, while its 100ns operation time allows it to quickly switch between forward & reverse directions. Its minimum clamping voltage of 7.7V guarantees a decrease in the number of false alarm signals generated.

The MURA115T3G has a low forward voltage drop of 1.2V to 1.6V, and a package size of 4mm × 5mm, making it ideal for small, compact applications. It can withstand up to a 1µs surge current rating of 35A, providing additional protection against surges and overvoltage. Similarly, it can handle a reverse surge current of 1µs pulse width duration with a peak value of 10A (Ipk).

The MURA115T3G device has an anode and cathode, separated by an encapsulated junction. When a positive voltage is applied to the anode and a negative voltage to the cathode, current rapidly transitions through the junction. This process is known as forward biasing, and it allows the MURA115T3G to operate as a single unidirectional rectifier. Alternatively, reverse biasing can be applied, in which case the device will not conduct, thereby limiting the flow of current in both directions.

In summary, the MURA115T3G is a versatile, single rectifier that can handle a wide range of operating conditions. Its 100 PIV minimum breakdown voltage rating, 25A repetitive peak reverse current (Irrm), 100ns operation time and 35A 1µs surge current rating all make it ideal for a variety of computer, communication and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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