MURA260T3G Allicdata Electronics
Allicdata Part #:

MURA260T3GOSTR-ND

Manufacturer Part#:

MURA260T3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE GEN PURP 600V 2A SMA
More Detail: Diode Standard 600V 2A Surface Mount SMA
DataSheet: MURA260T3G datasheetMURA260T3G Datasheet/PDF
Quantity: 10000
Stock 10000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 2A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: MURA260
Description

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The MURA260T3G is a diode rectifier in a single configuration with many unique and highly practical benefits over alternative models. Its superior design allows it to be used in a variety of applications including high current, power factor correction, and snubber circuits.

Product Details

The MURA260T3G is a surface mount rectifier composed of epitaxial silicon material with a maximum recovery time of 3 µs. It has an ultra-fast diode with a maximum forward voltage drop of 1.45 V and a reverse leakage current of 30 µA at room temperature. In addition, it has a surge capability of up to 8.4 A for 10 ms as well as a maximum current of 1.7 A. The device is guaranteed with a maximum power dissipation of 320 mW and a maximum junction temperature of 125°C.

Applications

The MURA260T3G is ideal for a range of compact, high current applications such as DC/DC back-up power, lighting, solar power converters, and other electronic circuits. It can also be used in power factor corrections, snubber circuits, motor drives, and other high speed switching applications.

Working Principle

RCD has conducted rigorous testing and research on this rectifier diode to ensure it meets the highest quality standards. The device\'s operation is based on what is known as PN junction. This is a basic operating principle of a diode rectifier in which the N-type (negative type) semiconductor layer is linked to the P-type (positive-type) semiconductor layer. When exposed to an external voltage, electrons are attracted away from the P-type layer, creating a current flow from the N-type layer to the P-type layer and back. This flow is called a forward voltage, and it is what powers the device and provides the current needed for operation.

Conclusion

The MURA260T3G from RCD is a highly versatile rectifier diode with superior performance in a very small form factor. By utilizing its fast diode and surge capabilities, this device can be readily deployed in high current, power factor correction, and snubber circuits. In addition, its small package size and low power dissipation make it ideal for applications where space is at a premium. Consistent with RCD\'s commitment to quality and customer satisfaction, the MURA260T3G offers exceptional value and reliability.

The specific data is subject to PDF, and the above content is for reference

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