Allicdata Part #: | MURA215T3GOSTR-ND |
Manufacturer Part#: |
MURA215T3G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURPOSE 150V 2A SMA |
More Detail: | Diode Standard 150V 2A Surface Mount SMA |
DataSheet: | MURA215T3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.06511 |
10000 +: | $ 0.06091 |
25000 +: | $ 0.05601 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 2µA @ 150V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The Mura215T3G diodes belong to the category of rectifiers and single diodes due to its function of converting AC electrical current into DC current. This diode has special features that make it suitable for a wide range of applications. This article will discuss the application field and working principle of the Mura215T3G diodes.
The Mura215T3G diodes are used in numerous applications due to their wide range of benefits. One of the most important benefits of this diode is its ability to filter out harmful frequencies and pulses. This makes it ideal for use in radio frequency applications where radio frequency interference may disrupt the normal operation of the device. In addition, this diode also has the ability to reduce noise and the voltage peaks which arise from electrical transients. This ensures better performance and improved efficiency.
The Mura215T3G diode also has a low leakage current which is essential for protecting sensitive circuits. The device is able to provide reliable protection of any circuit which is subjected to very high transient voltages. Furthermore, it is designed to operate efficiently even under extreme temperatures. This provides protection to components which are used in extreme environments.
In terms of the working principle, the Mura215T3G diode consists of two layers separated by a depletion layer. This layer acts as an insulator and prevents the current from passing through. When the voltage across the device is increased, the current starts to flow as electrons jump across the depletion layer. When the current is reversed, the electrons start to flow in the opposite direction, reversing the current.
The Mura215T3G diode is also characterized by its very low capacitance which is an advantageous feature when used in high-frequency circuits. This device is able to operate at high temperatures and its ability to operate efficiently under extreme conditions makes it suited for use in a variety of environments such as in vehicles, space applications and in certain types of industrial applications.
Overall, the Mura215T3G diodes are an economical and versatile solid state device which has a wide range of applications. Its unique characteristics make it ideal for a variety of applications from radio frequency applications to industrial and automotive uses. The ability to filter out frequencies and pulses makes it particularly appealing to those who need reliability and protection from transient voltages.
The specific data is subject to PDF, and the above content is for reference
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