MWI100-12A8

Current - Collector Cutoff (Max):	6.3mA
Base Part Number:	MWI
Supplier Device Package:	E3
Package / Case:	E3
Mounting Type:	Chassis Mount
Operating Temperature:	-40°C ~ 125°C (TJ)
NTC Thermistor:	No
Input:	Standard
Input Capacitance (Cies) @ Vce:	6.5nF @ 25V
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 100A
Power - Max:	640W
Current - Collector (Ic) (Max):	160A
Voltage - Collector Emitter Breakdown (Max):	1200V
Configuration:	Three Phase Inverter
IGBT Type:	NPT
Part Status:	Active

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MWI100-12A8 Application Field and Working Principle

Transistors - IGBTs - Modules

The MWI100-12A8 is an IGBT transistor module from Mitsubishi Electric\'s MW Series. This module is designed for switching circuit applications, with its wide common emitter current range of 30 to 100 A and collector-emitter voltage ratings of up to 1200 V. This makes the MWI100-12A8 ideal for a wide range of applications, such as motor control, power supplies, and AC servo drives.An IGBT (Insulated Gate Bipolar Transistor) is a type of power semiconductor device that combines the properties of a bipolar transistor and a field effect transistor (FET). It has the ability to switch high currents and powers with fast response times and low drive power requirements. They are the main components of power electronics systems, such as PWM (Pulse Width Modulation) inverters, and have become popular because they are significantly more efficient than other types of power switches.The MWI100-12A8 IGBT module is suitable for switching and rectification applications in power electronic converters. It consists of four individual IGBTs connected in parallel and a diode bridge, mounted on a single substrate with an insulation sheet on the bottom. The diode bridge is an important part of the module, and is used to rectify the AC voltage.The module employs a common emitter configuration and is built using Mitsubishi\'s Econo-Pack technology. This technology enables the module to maintain insulated gate drive signals even in high-power applications. Furthermore, it allows for high power density and better thermal stability due to the substitution of all copper connections with aluminum, significantly reducing the size and weight of the module.The operation of the MWI100-12A8 is relatively simple. When a gate signal is applied to the transistor, electrons are attracted to the positive gate, causing a conductive path to be created between the emitter and collector. This allows current to flow, turning the transistor on. When the gate signal is removed, the electrons are repelled, causing the transistor to turn off.The use of this IGBT module allows for better power control and efficiency in applications such as motor control and AC servo drives. It also offers increased reliability, as it can withstand high temperature and voltage conditions, while maintaining a high switching frequency. This makes it suitable for high-power applications.In conclusion, the MWI100-12A8 IGBT module is an excellent choice for a wide range of applications. It is capable of delivering high current and power ratings, as well as improved thermal stability, making it ideal for high-power applications. Its fast switching speeds, combined with Mitsubishi\'s advanced insulation technology, make it reliable, efficient and cost effective.

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