MWI15-12A6K Allicdata Electronics
Allicdata Part #:

MWI15-12A6K-ND

Manufacturer Part#:

MWI15-12A6K

Price: $ 24.73
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOD IGBT RBSOA SIXPACK E1
More Detail: IGBT Module NPT Three Phase Inverter 1200V 19A 90W...
DataSheet: MWI15-12A6K datasheetMWI15-12A6K Datasheet/PDF
Quantity: 1000
10 +: $ 22.48470
Stock 1000Can Ship Immediately
$ 24.73
Specifications
Current - Collector Cutoff (Max): 900µA
Base Part Number: MWI
Supplier Device Package: E1
Package / Case: E1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 0.6nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Power - Max: 90W
Current - Collector (Ic) (Max): 19A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase Inverter
IGBT Type: NPT
Part Status: Active
Description

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An MWI15-12A6K module is part of a range of Motorola MOSFET and IGBT products that offer economical, versatile and highly reliable power switches to meet a continuously expanding range of applications. The MWI15-12A6K module is designed to provide reliable, low on-resistance, high-speed switching in a low-cost package and has a wide range of applications and working principles.

Application Field

The MWI15-12A6K module is suitable for applications where higher currents and voltages need to be switched or controlled compared to smaller and more conventional transistor devices. It has a low voltage rating of just 15V with a chip maximum on-state resistance of 15mΩ, making it a great choice for use in power supplies, motor drives, inverters, industrial automation, and audio and video systems as well as for high-speed switching applications. It also offers an extremely low power loss and is able to handle currents up to 500A.

Working Principle

The MWI15-12A6K module is an insulated-gate bipolar transistor (IGBT) module, which is a power semiconductor device that combines the best features of both bipolar transistors and MOSFETs. It consists of two bipolar transistors and a field-effect transistor (FET) on a single chip. The IGBT module acts as a switch, with the FET controlling the current between the emitter and collector of the two transistors. The IGBT’s switching characteristics are determined by its gate drive voltage, gate source voltage, gate source current and gate source capacity. As the current flowing through the transistor increases, the on-state resistance decreases and the IGBT reaches its rated breakdown current. By varying its gate voltage, the IGBT can be turned on and off, allowing for precise and fast control of the current.

The MWI15-12A6K IGBT module is suitable for applications requiring high-speed switching, high-current carrying capacity, and low on-state resistance. The device also offers low power loss, making it ideal for applications in fields such as power supplies, motor drives, and industrial automation.

The specific data is subject to PDF, and the above content is for reference

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