MWI100-12E8 Allicdata Electronics
Allicdata Part #:

MWI100-12E8-ND

Manufacturer Part#:

MWI100-12E8

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOD IGBT SIXPACK RBSOA 1200V E3
More Detail: IGBT Module NPT Three Phase Inverter 1200V 165A 64...
DataSheet: MWI100-12E8 datasheetMWI100-12E8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Collector Cutoff (Max): 1.4mA
Base Part Number: MWI
Supplier Device Package: E3
Package / Case: E3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 7.4nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Power - Max: 640W
Current - Collector (Ic) (Max): 165A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase Inverter
IGBT Type: NPT
Part Status: Obsolete
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MWI100-12E8 is a high-voltage and high-current Insulated Gate Bipolar Transistor (IGBT) module with excellent characteristics and robustness. IGBT modules are essential components of power electronics equipment and are used in many different fields, such as power equipment manufacturing, electric vehicle manufacture, heavy machinery and industrial automation. The MWI100-12E8 is a high-voltage and high-current module specifically designed to deliver efficient, reliable and economical operation in demanding applications.

IGBT modules have been used in power electronics applications since the 1980s, when they first appeared on the market as discrete components. In the past decades, the increased demand for higher-energy efficient, reliable and cost-effective energy solutions has driven the development of IGBT technology. IGBTs are superior to traditional metal-oxide semiconductor field effect transistors (MOSFETs) due to their higher commutation speed, better thermal performance and less switching losses.

The MWI100-12E8 features a single-coil IGBT that provides superior switching performance in high-current and high-voltage applications. It is capable of handling currents up to 1000 amperes (1S) and voltages up to 1200 volts (12V). The module also features a wide range of protection against over-voltage, over-temperature and short circuit. The module is designed for use in applications such as UPS, power converters, inverters, motor drives and PV systems.

The basic working principle of an IGBT module is simple. It consists of two semiconductor devices: a voltage-controlled thyristor (a bi-directional device) and an insulated gate bipolar transistor (IGBT). The IGBT is controlled by an insulated gate, which when activated, allows current to flow through. The thyristor, on the other hand, allows unidirectional current flow. In IGBT modules, the IGBTs and thyristors are arranged in parallel configurations and are connected in series. The IGBTs are typically used to switch the current, while the thyristors are used to control the current.

The MWI100-12E8 is an advanced IGBT module that provides the user with superior performance and power efficiency. It is designed to deliver performance and reliability in demanding applications. It features a high-speed IGBT and superior thermal characteristics that make it an ideal choice for applications such as UPS, power converters, inverters, motor drives and PV systems. The module is also designed to meet the highest quality standards and has been tested to ensure long-term reliability and cost-effectiveness.

The specific data is subject to PDF, and the above content is for reference

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