![MWI150-06A8T Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | MWI150-06A8T-ND |
Manufacturer Part#: |
MWI150-06A8T |
Price: | $ 95.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT SIXPACK 170A 600V E3PACK |
More Detail: | IGBT Module NPT Three Phase Inverter 600V 170A 515... |
DataSheet: | ![]() |
Quantity: | 1000 |
5 +: | $ 87.25220 |
Current - Collector Cutoff (Max): | 1.5mA |
Base Part Number: | MWI |
Supplier Device Package: | E3 |
Package / Case: | E3 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -- |
NTC Thermistor: | No |
Input: | Standard |
Input Capacitance (Cies) @ Vce: | 6.5nF @ 25V |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 150A |
Power - Max: | 515W |
Current - Collector (Ic) (Max): | 170A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Configuration: | Three Phase Inverter |
IGBT Type: | NPT |
Part Status: | Active |
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The MWI150-06A8T is an insulated-gate bipolar transistor (IGBT) module that is commonly used in industrial, transportation and renewable energy applications. It features a maximum blocking voltage of 600V, a maximum current of 150A and a maximum case temperature of 150°C. Its design also provides a low on-state resistance and a low switching energy, making it suitable for energy-efficient applications.
The MWI150-06A8T module consists of a combination of two different device types: an IGBT and a diode. An IGBT is a type of transistor that uses a insulated gate for control and uses both bipolar Junction Transistor (BJT) and metallic oxide-semiconductor field-effect transistor (MOSFET) characteristics. The IGBT offers superior switching performance over conventional BJT or MOSFET transistors, while also providing a low on-state resistance and a low switching energy. The diode included in the module helps provide protection against reverse voltage spikes.
The operation of the MWI150-06A8T module can be split into three distinct phases: turn-on, steady-state and turn-off. During the turn-on phase, a gate voltage is applied to the IGBT, allowing it to turn on. Once the gate voltage has reached a certain threshold, the drain-source voltage across the IGBT will reach a saturation voltage that is dependent on the gate voltage and the load current. As the gate voltage increases further, the saturation voltage will decrease until it reaches a steady-state voltage, which is the voltage across the IGBT in the steady-state operation. Finally, in order to turn the module off, the gate voltage is reduced to zero, causing the IGBT to turn off.
The MWI150-06A8T module is commonly used in applications such as AC drives, UPS systems, traction systems, wind turbines, solar inverters and other renewable energy applications. It is also well-suited for automotive applications, such as electric and hybrid electric vehicles. The module can be used in harsh environments due to its ability to withstand high temperatures and high voltages. The module is also highly reliable and has a long service life.
In summary, the MWI150-06A8T is an insulated-gate bipolar transistor (IGBT) module that features a maximum blocking voltage of 600V, a maximum current of 150A and a maximum case temperature of 150°C. It consists of an IGBT and diode, and offers superior switching performance over conventional BJT or MOSFET transistors. The module is commonly used in AC drives, UPS systems, traction systems, wind turbines, solar inverters and other renewable energy applications. It is also renowned for being highly reliable and having a long service life.
The specific data is subject to PDF, and the above content is for reference
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