![MWI100-12T8T Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | MWI100-12T8T-ND |
Manufacturer Part#: |
MWI100-12T8T |
Price: | $ 98.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOD IGBT TRENCH SIXPACK E3 |
More Detail: | IGBT Module Trench Three Phase Inverter 1200V 145A... |
DataSheet: | ![]() |
Quantity: | 1000 |
5 +: | $ 89.32490 |
Current - Collector Cutoff (Max): | 4mA |
Base Part Number: | MWI |
Supplier Device Package: | E3 |
Package / Case: | E3 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
NTC Thermistor: | Yes |
Input: | Standard |
Input Capacitance (Cies) @ Vce: | 7.21nF @ 25V |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 100A |
Power - Max: | 480W |
Current - Collector (Ic) (Max): | 145A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Configuration: | Three Phase Inverter |
IGBT Type: | Trench |
Part Status: | Active |
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The MWI100-12T8T is an insulated gate bipolar transistor (IGBT) module that belongs to the “discrete bipolar” product range from Infineon Technologies. It is designed for various applications in power electronics, functioning as a high-power, high-efficiency switch for power conversion, motor control, and UPS applications, to name a few.
Applications
The MWI100-12T8T facilitates continual reliable operation of critical systems, such as electric vehicles and industrial automation systems due to its high power output and load variation capabilities. Typical applications include motor drives, AC-DC and DC-DC converters, and switch mode power supplies (SMPS). The device has positive temperature characteristics, low conduction losses, and wide dv/dt capability, making it ideal for use in a variety of power electronic systems.
Operating Principles
The operating principle of the MWI100-12T8T is based on the same principles of a normally-off IGBT power switch. An insulated gate controls the conduction of current between the collector and emitter terminals, thereby acting as a switch. The control terminal (gate) must be triggered in order for the switch to turn on. The device can be switched at very low gate voltage and exhibits superior switching characteristics and fewer losses at higher frequencies. The device features a built-in freewheeling or fly-back diode eliminating the need for an external diode.
To protect the device against high currents and catastrophic failure, it has an over-current protection (OCP) circuit. The OCP monitors the current flowing through the IGBT and interrupts the main power supply when the current exceeds the threshold value. This prevents the current from exceeding the power rating of the device and causing permanent damage. In addition, the device has a negative temperature coefficient (NTC) thermistor, which helps in overheating protection.
In order to ensure maximum performance and safety, the device also has a comprehensive set of protection features, such as under-voltage lock-out (UVLO), over-voltage protection, short-circuit protection, and over-temperature protection. These features provide superior power switching performance with enhanced safety.
The MWI100-12T8T offers superior robustness and reliability, making it ideal for a wide range of applications in the industrial, automotive, aerospace and consumer electronics markets.
The specific data is subject to PDF, and the above content is for reference
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