
MX1N8150US Circuit Protection |
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Allicdata Part #: | MX1N8150US-ND |
Manufacturer Part#: |
MX1N8150US |
Price: | $ 22.58 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 20.51670 |
Series: | * |
Part Status: | Active |
RoHS Status: | RoHS non-compliant |
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The MX1N8150US is a Transient Voltage Suppressor (TVS) diode specifically designed for portable device protection against transients caused by electrostatic discharge (ESD) and lightning, as well as heavy surge current from inductive loads. This TVS diode is available in a SOD-123FL package with low power consumption, making it ideal for applications requiring reliable protection due to its space and thermal performance.
The MX1N8150US TVS diode is essentially a Zener diode with a built-in breakdown voltage. It is designed with fast response time to reduce clamping voltages and dissipating ESD pulses, and its low capacitance allows fast-rising edge rates of signal protection. It also provides ESD protection up to 25kV Human Body Model, meeting the requirements of IEC 61000-4-2 international standard. This diode is RoHS compliant and rated for use from -55°C to +125°C.
This TVS diode has a variety of applications, such as automotive, industrial control, office automation, audio/video, telecom, and consumer electronics. It can be used in a power supply circuit for protecting against surges and protecting the power system from sudden high-voltage transients. It can also be used to protect DC and AC power lines, such as those used in industrial and manufacturing control systems. In addition, it can be used in telecommunications systems, and in consumer devices such as laptops, tablets, and cell phones.
The MX1N8150US TVS diode is designed with a metal-oxide-semiconductor field-effect transistor (MOSFET) structure. It has two terminals, an anode and a cathode. The anode is connected to the line or device to be protected, and the cathode is connected to ground. When a voltage is applied to the input that exceeds the diode\'s breakdown voltage, it enters a state of conduction and sinks the excess voltage to ground. This protects the line or device from the excess voltage.
The working principle behind the protection provided by the MX1N8150US TVS diode is known as avalanche breakdown. This is a phenomenon where the diode’s internal resistance quickly increases exponentially, providing a low-voltage conduction path to ground. The amount of voltage that can be absorbed by the diode is limited, however, and the diode may be destroyed if too much voltage is applied. The MX1N8150US TVS diode is designed to clamp its output voltage to a safe level in order to protect the connected device.
The MX1N8150US TVS diode is an effective solution for surge and ESD protection in a variety of applications. Its fast response time and low power consumption make it an ideal choice for portable device protection, and its RoHS compliance ensures compatibility with the most current regulations. With its wide range of applications, and its ability to provide reliable protection from destructive transients, the MX1N8150US TVS diode is an excellent choice for any application requiring surge or ESD protection.
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Part Number | Manufacturer | Price | Quantity | Description |
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MX1N8173 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8175 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8161 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8172US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8166US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8148 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8160 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8181US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8175US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8180 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8159US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8182US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8178 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8176 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8160US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8162US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8159 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8164US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8165US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8149 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8157US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8152US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8173US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8158 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8149US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8164 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8167 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8150US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8155 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8177US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8171 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8169 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8176US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8182 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8153 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8161US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8178US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8168US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
MX1N8174 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
MX1N8154 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
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