MXLLCE11A Circuit Protection

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TVS diodes are highly efficient and reliable components used to protect sensitive electrical and electronic circuits from sudden and transient voltage. The MXLLCE11A is a TVS diode specifically designed for transients induced by electrostatic discharges (ESD) and taken and lightning. This diode offers excellent protection against random events caused by indirect harsh environment conditions with a peak pulse current capability of 10A (tp=8/20μs) and low capacitance of 0.6pF.

The MXLLCE11A is widely used in various applications including industrial automation, automotive systems, consumer electronics, medical devices, telecom systems and computing. This TVS diode is capable of providing maximal protection against ESD and other overvoltage threats for a wide variety of applications subject to high levels of transient voltage. It is available in a SC-82, SC-76, SOT-23, SMB, SMA and DO-35 package, making it suitable for a range of requirements.

The working principle of the MXLLCE11A can be described as follows. In order to provide protection, the diode must become forward biased with a low voltage drop when a high voltage poses a threat. To accomplish this, the maximum voltage rating of the diode should be slightly higher than the peak transient voltage level. When the peak transient voltage polarity is reversed to a ground voltage, the diode shuts down and becomes reverse biased. It then redirects the transient current to ground, thus providing protection to the circuit it is connected to.

When an ESD event occurs, a high voltage impulse is suddenly induced on the line connected to the MXLLCE11A. The diode then conducts to divert the impulse current away from the circuit being protected. The MXLLCE11A diode produces a low voltage drop during conduction and allows a typical flow of up to 10A for a duration of 8/20μs. This ensures that the protected circuit is not subjected to a voltage higher than the maximum breakdown voltage of the device.

The MXLLCE11A is designed with a low capacitance structure that improves the diode’s response to transient events while providing limited impact on signal integrity. This low-capacitance architecture also helps protect the circuit against indirect transients generated by EMI events or other sources. The temperature coefficient of this diode is another important feature that ensures it performs reliably in varying operating temperatures.

In conclusion, the MXLLCE11A is an efficient and reliable TVS diode designed and manufactured to provide maximum protection against ESD and other overvoltage transients. Its low capacitance structure, temperature coefficient, peak pulse current capability and wide range of packaging options make it suitable for a wide variety of applications in the industrial, automotive, consumer electronics, medical, telecom and computer industries.

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