MXLLCE22AE3 Allicdata Electronics

MXLLCE22AE3 Circuit Protection

Allicdata Part #:

1086-10184-ND

Manufacturer Part#:

MXLLCE22AE3

Price: $ 10.84
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 22V 35.5V CASE-1
More Detail: N/A
DataSheet: MXLLCE22AE3 datasheetMXLLCE22AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 9.85320
Stock 1000Can Ship Immediately
$ 10.84
Specifications
Voltage - Clamping (Max) @ Ipp: 35.5V
Supplier Device Package: CASE-1
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 42A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 24.4V
Voltage - Reverse Standoff (Typ): 22V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS Diodes are a form of protective semiconductor device used in electronic applications to protect against electrical transients such as ESDs and lightning. The MXLLCE22AE3 is a three-loop transient voltage suppressor diode designed for powerline applications, such as telecommunications. It features three separate I/O clips for connecting power, ground, and a reference voltage, and is rated for a peak pulse current of up to 35A.

The MXLLCE22AE3 is designed to clamp transients, reduce voltage, and provide protection from external electrical forces like lightning. Its clamping voltage is typically around 30V (Vbr), and it features a low clamping coefficient of 0.3V/A. It has a high peak pulse holding current of 30A, making it suitable for high voltage applications such as telecommunications. This unit is available with various lead pitch sizes and different baseplate heights, making it suitable for a wide range of applications.

The MXLLCE22AE3’s working principle is based on the doping process used in semiconductor construction. It employs an N-type and an R-type dopant placed in a semiconductor material. When a transient voltage is applied across the terminals, the N-type and R-type dopants are heated up, promoting electrons and holes to the electrical contact. The electrons and holes then form a barrier and hence limiting the voltage that can enter the application.

The MXLLCE22AE3 can be used in a wide range of applications in the telecommunications, automotive, medical, and industrial fields. It can be used to provide protection against ESD and transient overvoltage events in home appliances, automotive electronics, laser diode protection, and power supplies. In the telecom and industrial fields, it can be used to provide a high level of protection from lightning, EMI, and other transient events that may affect the operation of electronic components.

In addition, the MXLLCE22AE3 is suitable for applications involving the monitoring of power flow and voltage levels. It can be used to safeguard applications from unintentional power supply interruptions or from voltage peaks. It can also be used to ensure that the operation of cabling, connection systems, and components affected by power fluctuations remain reliable.

The MXLLCE22AE3 is an ideal choice for a wide range of applications, providing reliable protection against transient overvoltage events and the transmission of information signals. This device is designed to withstand higher peak pulse currents, allowing for increased protection of equipment and components. It is a cost-effective solution for safeguarding sensitive electronic components and ensuring reliable operation.

The specific data is subject to PDF, and the above content is for reference

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