MXSMBG2K3.0 Allicdata Electronics
Allicdata Part #:

1086-13883-ND

Manufacturer Part#:

MXSMBG2K3.0

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 3V 5.4V DO215AA
More Detail: N/A
DataSheet: MXSMBG2K3.0 datasheetMXSMBG2K3.0 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 3V
Voltage - Breakdown (Min): 4.3V
Voltage - Clamping (Max) @ Ipp: 5.4V
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Supplier Device Package: SMBG (DO-215AA)
Description

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MXSMBG2K3.0 is a popular TVS (Transient Voltage Suppressor) diode. A TVS diode is a form of semiconductor device designed to protect circuits against transient voltages, or electrical spikes. It can help protect circuits from surges due to lightning, high frequency signals, electrostatic discharge, and other causes.

MXSMBG2K3.0 is designed specifically with automotive and industrial applications in mind. The main purpose of this device is to protect sensitive electronics from transient voltages and ensure system reliability in shock or transient voltage environments. It is an ultra-low capacitance device with a transient voltage protection capability up to 2.3kV.

The MXSMBG2K3.0 diode has an internal burr-Brown (BB) process, which makes it an efficient voltage suppressor. The BB process is designed to ensure a low capacitive load and to enable quick responses to high voltage spikes. This process is also designed to allow for a quick recovery after the transient voltage spike which helps protect the sensitive electronics from long-term damage.

The working principle of the MXSMBG2K3.0 is quite simple. When the voltage exceeds the breakdown voltage of the diode, the internal breakdown mechanism starts. This breakdown mechanism releases a current surge and discharges the energy from the transient voltages into harmless levels. This process happens very quickly, allowing the system to resume normal operation.

The MXSMBG2K3.0 has two operating characteristics: transient protection and reverse bias clamping. Transient protection occurs when the voltage exceeds the breakdown voltage and the current surge is released. This protects sensitive electronics from possible damage due to transient voltages. Reverse bias clamping occurs when the voltage is below the breakdown voltage and the MXSMBG2K3.0 diode operates as a normal diode with a reverse bias voltage clamping. This feature helps protect the system from excessive currents caused by a transient.

The MXSMBG2K3.0 is an important component of systems that require reliable protection from transient voltages. Its efficient internal BB process ensures a fast response to transient voltage spikes and provides reliable protection to sensitive electronics. With its two operating characteristics, the MXSMBG2K3.0 is a highly useful component for industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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