MXSMBJ130AE3 Circuit Protection

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The TVS Diode, named Transient Voltage Suppressor, is a widely used device within the electronics industry. It is designed to provide protection to devices, circuitry and systems from voltage overshoot and spikes in power. The MXSMBJ130AE3 TVS Diode is a unidirectional device that has been designed specifically for over voltage protection from highly transient negative or positive events.

It has an ultra thin base (3.2mm x 2.5mm) which makes it ideal for use in portable applications. The small size of the MXSMBJ130AE3 means it is able to provide protection for more space constrained applications without diminishing its ability to provide the highest level of surge protection. Its low profile construction also makes it suitable for use in high density designs.

The MXSMBJ130AE3 is capable of protecting against extremely high voltage transients which have come to be known as "Electrostatic Discharge" (ESD) events. The device\'s design allows it to absorb the high energy spikes created by such events and dissipate them across its body to protect other nearby electronic components. Additionally, the MXSMBJ130AE3 is capable of providing protection from power rail overshoots and inrush currents.

The MXSMBJ130AE3 offers an impressive amount of surge protection in a very small package. It is ideal for use in any application that requires an Electric over Stress protection device, such as: consumer electronics, automotive systems, power supply, and telecommunications. It provides an efficient and reliable protection solution for devices that are vulnerable to the effects of overvoltage transients.

The MXSMBJ130AE3\'s working principle is based on two electrically separated P-N junctions, which are designed to clamp the voltage temporarily when the diode is in avalanche mode. The device is usually placed in parallel with a load, or a circuit to be protected, and its breakdown voltage is set to be higher than the maximum voltage expected to be seen in the normal operating conditions of that load or circuit. When a transient voltage surge happens, the voltage at the load will exceed its maximum voltage limit. At this point, the P-N junction in the TVS diode will become reverse biased and its breakdown voltage will be reached.

The breakdown voltage of the diode triggers the avalanche effect in which the P-N junctions of the diode start to conduct and divert the excess current away from the protected load. This effect takes place within a few nanoseconds and the diode is overcome in a condition known as a zener breakdown, where the voltage is clamped and current redirection is achieved. The current conducted by the diode is then dissipated in the form of heat. Once the transient has passed, the diode returns back to its normal operation.

The MXSMBJ130AE3 is an ideal choice for applications that require over voltage protection. Its small size and low profile allow it to be used in applications where other TVS diodes are too large and bulky. Additionally, its impressive surge protection capabilities make it suitable for a wide range of applications including consumer electronics, automotive systems, power supply, and telecommunications. The device\'s ultra-fast action and high energy absorption make it the perfect choice for protecting sensitive circuitry against overvoltage transients.

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