MXSMBG2K5.0E3

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A TVS (transient voltage surge suppressor) diode is an electronic device used to protect electrical circuitry from damaging transients, voltages, and current surfs. The MXSMBG2K5.0E3 is a semiconductor, uni-directional, dual junction, glass-encased diode designed to provide superior protection from harmful transients such as electrostatic discharges, inductive spikes and reactive pulses. It is a low-capacitance protector that is designed to provide a low clamping voltage while still providing very high surge absorptions at high speeds. The MXSMBG2K5.0E3 is available in lead-free or dipped and wave solderable packages.

MXSMBG2K5.0E3 application fields include protection for communication systems and data acquisition systems. This device works in a variety of different voltage configurations ranging from 5.0 volts to 30 volts. It is engineered with a dual junction structure and works with both bipolar and unipolar transient voltages. The diode is suitable for applications including high-speed differential networks, modems, differential data acquisition systems, modems for high-speed communication networks, and automotive application networks.

The MXSMBG2K5.0E3 is designed to protect IC’s, power supplies, data lines, transistors from transients, surges and over-voltage conditions. By using a low-capacitance technology the device is able to absorb very high levels of transients without a significant change in the clamping voltage. It is also designed with a dual junction structure which enables it to both absorb high-voltage transients as well as dissipate lower-level energy pulses.

The working principle of the MXSMBG2K5.0E3 is based on the operation of a zener diode. When a transient voltage is applied to the diode it will pass through the diode to ground releasing a surge of energy. This surge will create an electric field which will cause the diode junction to break down which results in a clamping voltage. The diode is designed to provide this voltage at very high speeds with minimal change in the output voltage.

The device also has the ability to absorb any higher energy levels that may occur. This is accomplished by the use of a metal oxide semiconductor field effect transistor (MOSFET). When an over-voltage condition occurs, the MOSFET is turned on which dissipates the energy. This results in a very low clamping voltage which provides protection from high-energy pulses.

In conclusion, the MXSMBG2K5.0E3 is a TVS diode designed to protect electronics from damaging transients, voltages, and current surges. It works by using a dual junction structure and a MOSFET to allow high-speed absorption of transients with a low clamping voltage. The device is suitable for applications such as communication networks, differential data acquisition systems, modems, and automobile networks. It is available in lead-free or dipped and wave solderable packages giving it a wide range of applications and flexibility for different designs.

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