MXSMCJLCE30A/TR Circuit Protection |
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Allicdata Part #: | MXSMCJLCE30A/TRMS-ND |
Manufacturer Part#: |
MXSMCJLCE30A/TR |
Price: | $ 11.56 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | HI REL TVS |
More Detail: | N/A |
DataSheet: | MXSMCJLCE30A/TR Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
100 +: | $ 10.51440 |
Current - Peak Pulse (10/1000µs): | 31A |
Supplier Device Package: | SMCJ (DO-214AB) |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | 100pF @ 1MHz |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Series: | Military, MIL-PRF-19500 |
Voltage - Clamping (Max) @ Ipp: | 48.4V |
Voltage - Breakdown (Min): | 33.3V |
Voltage - Reverse Standoff (Typ): | 30V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
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TVS - Diodes, which stands for Transient Voltage Suppressor Diodes, are a type of semiconductor device that functions as a protective element designed to protect sensitive electronics from voltage transients such as electrostatic discharge, lightning and electro-magnetic pulse. MXSMCJLCE-30A/TR is a specific type of such diode, and it is used in applications where aggressive surge and ESD protection is required.
Some of the fields in which the MXSMCJLCE-30A/TR is deployed as a protection device are automotive circuits, industrial control systems, medical equipment and electronic devices. The device is also rated for high-speed data applications, and can operate at a working voltage of 200V, with reverse stand-off of 30V. The junction capacitance is measured at 1500pF, and it is also negatively temperature coefficient.
The working principle of an MXSMCJLCE-30A/TR can be described as follows. The device is designed to protect sensitive circuitry from high energy transients. When a voltage transient exceeds the breakdown voltage of the diode, current will flow and the diode will act like a short circuit. This will limit the peak voltage from the transient to the diode\'s breakdown voltage, thus protecting the device from potential damage.
Once the current has been limited to the device\'s breakdown voltage, the diode will then begin to dissipate the excess energy from the transient and return it to its original state. This process is called clamping, and it enables the diode to effectively protect the device it is connected to from damage.
The MXSMCJLCE-30A/TR is also designed to protect against static charge buildup from ESD events. This is achieved by the diode\'s clamping feature, which will limit the peak voltage generated by an ESD event to the device\'s breakdown voltage. This protects sensitive electronics from potential EMI interference, and it also prevents damage to the device.
Overall, the MXSMCJLCE-30A/TR is a highly effective device designed to provide a variety of protection to sensitive electronics in the automotive, medical, and industrial control systems where a high degree of surge and ESD protection is required. It is capable of providing effective clamping of voltage transients, and it also has a high enough breakdown voltage to protect against static charge buildup from ESD events. By using this device, engineers can prevent costly and potentially hazardous damage to sensitive electronics.
The specific data is subject to PDF, and the above content is for reference
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MXSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXSMBG2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXSMCJ5.0CA | Microsemi Co... | 15.34 $ | 3 | TVS DIODE 5V 9.2V DO214AB |
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MXSMBJ100AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXSMBJ10A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 10V 17V DO214AA |
MXSMBJ10AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 10V 17V DO214AA |
MXSMBJ110A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXSMBJ110AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXSMBJ11A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
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MXSMBJ12A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXSMBJ12AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
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MXSMBJ13AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXSMBJ14A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
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