MXSMCJLCE10A/TR Allicdata Electronics

MXSMCJLCE10A/TR Circuit Protection

Allicdata Part #:

MXSMCJLCE10A/TRMS-ND

Manufacturer Part#:

MXSMCJLCE10A/TR

Price: $ 11.50
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: HI REL TVS
More Detail: N/A
DataSheet: MXSMCJLCE10A/TR datasheetMXSMCJLCE10A/TR Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
100 +: $ 10.45170
Stock 1000Can Ship Immediately
$ 11.5
Specifications
Series: Military, MIL-PRF-19500
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 10V
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Current - Peak Pulse (10/1000µs): 88A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMCJ (DO-214AB)
Description

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The MXSMCJLCE10A/TR is a proprietary two-terminal transient voltage suppressor diode package designed to protect semiconductor components from high voltage transient and ESD. This device is used in many applications, including communications systems, home networking equipment, automotive components and consumer electronics.

The MXSMCJLCE10A/TR offers robust ESD protection with a breakdown voltage of 6.5V and an IEC 61000-4-2 Level 4 rating of 8kV for contact discharge protection. This device has an operating capacitance of 2.3pF at 4V and a maximum clamping voltage of 9.3V at a surge current of 8A, 8/20μs.

This device is designed to protect sensitive components from electrical transients by providing a current path to ground, thus controlling the overvoltage. The device features a low inductance structure that helps reduce switching noise to prevent high frequency radiated and conducted emissions. The diode is capable of rapid response to transient events and can act as a low impedance shunt in order to effectively drain off the overvoltage.

When a positive or negative transient voltage is applied to the device, the diode clamps the voltage at a predetermined level and prevents it from exceeding the maximum rated breakdown voltage. The device is designed to handle reverse and forward transients, making it suitable for both line and load protection. The low resistance of the device allows for low power dissipation when withstanding transient events.

The operating principle of the MXSMCJLCE10A/TR is based on a silicon carbide diode. When reverse-biased, the diode acts as an open switch with a relatively high impedance. When forward-biased, the diode conducts current in the same way as a conventional thyrector diode. When exposed to an overvoltage, the breakdown voltage is reached and the diode conducts current, forming a low impedance current path to ground to protect the device and limit the overvoltage.

This device is particularly suitable for use in communications equipment, vehicular equipment, consumer products, and other applications that require protection against high voltage transients. Its small size, low ESD sensitivity, and fast response time make it an ideal choice for these types of applications.

In conclusion, the MXSMCJLCE10A/TR is a two-terminal transient voltage suppressor diode package designed to protect sensitive semiconductor components from high voltage transients and ESD. It offers robust ESD protection, low operating capacitance, a maximum clamping voltage of 9.3V at 8A, and fast response time. The diode is suitable for both line and load protection and is an excellent choice for applications that require protection against high voltage transients.

The specific data is subject to PDF, and the above content is for reference

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