MXSMCJLCE80AE3 Circuit Protection

TVS diodes are used in a wide range of applications for various types of integrated circuit protection. This article discusses the application fields and working principles of MXSMCJLCE80AE3, a type of TVS diode.

What is a TVS Diode?

A transient voltage suppression (TVS) diode is a protective component designed to protect sensitive electronic devices against electrostatic discharge (ESD) and other electrical transients. TVS diodes act by providing a temporary path for current away from vulnerable components when a high voltage is detected.

Application Fields of MXSMCJLCE80AE3

MXSMCJLCE80AE3 is a silicon bidirectional TVS diode specifically designed to protect sensitive electronic components against ESD, EFT, and lightning surge transients. It has a peak pulse power dissipation of 10 kW, a maximum clamping voltage of 80V, and a breakdown voltage of 45V.

MXSMCJLCE80AE3 is suitable for a wide range of applications including:

• Automotive applications
• Industrial equipment
• Data processing systems
• Communications systems
• Consumer electronics

Working Principle of MXSMCJLCE80AE3

The working principle of MXSMCJLCE80AE3 begins with the triggering of its avalanche breakdown feature. Electrons liberated as a result of the surge in voltage spread in the direction of the depletion region, causing an increase in the current flow until it reaches a peak. The power dissipation then limits the further increase in current.

At this point, the diode is in the saturation region, which means it has reached its clamping voltage. Once the transient has passed, the device returns to its original state as the electrons return to their original positions.

Conclusion

MXSMCJLCE80AE3 is a TVS diode designed to protect sensitive electronic components against ESD, EFT, and lightning surge transients. It is suitable for a wide range of applications, including automotive and industrial equipment, data processing systems, communications systems, and consumer electronics. It features an avalanche breakdown process which enables the diode to reach its clamping voltage, after which it returns to its original state.