MXSMLJ12CA/TR Circuit Protection |
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Allicdata Part #: | MXSMLJ12CA/TRMS-ND |
Manufacturer Part#: |
MXSMLJ12CA/TR |
Price: | $ 12.03 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | HI REL TVS |
More Detail: | N/A |
DataSheet: | MXSMLJ12CA/TR Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
100 +: | $ 10.93250 |
Current - Peak Pulse (10/1000µs): | 150.6A |
Supplier Device Package: | SMLJ (DO-214AB) |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 3000W (3kW) |
Series: | Military, MIL-PRF-19500 |
Voltage - Clamping (Max) @ Ipp: | 19.9V |
Voltage - Breakdown (Min): | 13.3V |
Voltage - Reverse Standoff (Typ): | 12V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
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TVS diodes are mainly used to protect sensitive circuit devices from destructive electrical overstress (EOS) caused by electrostatic discharge (ESD), electrical surges, electro-magnetic pulses (EMP) and other phenomena. They act like a fuse, by quickly clamping down the voltage that does not exceed their threshold voltage. MXSMLJ12CA/TR is one of the leading TVS diodes, providing double protection.
The major application field of MXSMLJ12CA/TR is for hard disk drives (HDDs) and optical drives. They are designed to prevent up to twice the inrush current and surge current that might otherwise occur during hot plugging devices into the motherboard. The board will degrade rapidly if exposed to an overcurrent. MXSMLJ12CA/TR provides a protection function. Also, MXSMLJ12CA/TR is a fast response device, which protects within 20ns. It is also rated to withstand ±30kV ESD, ±20A of surge assured electrical specifications.
In terms of working principle, MXSMLJ12CA/TR has a transparent lid that encapsulates the anode and cathode, separated by an air gap. This air gap aids with the fast build up of electrons through the device, bypassing the normal carrier transport. The circuit below illustrates the working principle of MXSMLJ12CA/TR in which the positive and negative voltage signals are applied separately.
When the voltage on the anode is greater than the voltage on the cathode, the avalanche effect will cause the air gap to break down, creating a negative resistance across the diode. This negative resistance will oppose the current flow to reduce the amount of current that can flow through the device. Then, as the current continues to increase, the energy stored within the device, which is in the form of avalanche multiplication, will eventually cause the device to break down. This will prevent the current from damaging the connected components. Furthermore, MXSMLJ12CA/TR will recover after a short time period, and is able to withstand multiple breakdowns.
In summary, MXSMLJ12CA/TR can protect components from ESD, electrical surges, and any other destructive electrical overstress. It is a rapidly responding device with a transparent lid and double protection feature, applying a negative resistance across the diode when the voltage on the anode is greater than the voltage on the cathode. MXSMLJ12CA/TR demonstrates the advantages of being a robust and reliable component, due to its ability to withstand multiple breakdowns and recover after a short time period.
The specific data is subject to PDF, and the above content is for reference
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MXSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXSMBG2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
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MXSMBJ100AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXSMBJ10A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 10V 17V DO214AA |
MXSMBJ10AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 10V 17V DO214AA |
MXSMBJ110A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXSMBJ110AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXSMBJ11A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXSMBJ11AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
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MXSMBJ120AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXSMBJ12A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXSMBJ12AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXSMBJ130A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXSMBJ130AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXSMBJ13A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXSMBJ13AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXSMBJ14A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXSMBJ14AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
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