MXSMLJ12CAE3/TR Circuit Protection |
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Allicdata Part #: | MXSMLJ12CAE3/TRMS-ND |
Manufacturer Part#: |
MXSMLJ12CAE3/TR |
Price: | $ 12.03 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | HI REL TVS |
More Detail: | N/A |
DataSheet: | MXSMLJ12CAE3/TR Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
100 +: | $ 10.93250 |
Current - Peak Pulse (10/1000µs): | 150.6A |
Supplier Device Package: | SMLJ (DO-214AB) |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 3000W (3kW) |
Series: | Military, MIL-PRF-19500 |
Voltage - Clamping (Max) @ Ipp: | 19.9V |
Voltage - Breakdown (Min): | 13.3V |
Voltage - Reverse Standoff (Typ): | 12V |
Bidirectional Channels: | 1 |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
RoHS Status: | RoHS Compliant |
Part Status: | Active |
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TVS - Diodes
Transient Voltage Suppression (TVS) diodes are devices designed to protect sensitive electronics from high voltage transients such as those caused by lightning, power surges, electrostatic discharge, etc. These diodes use triggered avalanche breakdown to divert harmful spikes in voltage away from sensitive components. TVS diodes can be used to protect both inputs and outputs in a variety of application fields, and are an integral part of any system relying on reliable electronics.
The MXSMLJ12CAE3/TR is a bi-directional TVS diode, and is specifically designed to protect sensitive electronics against transients between 5V and 12V. It features an electron beam-triggered avalanche breakdown, which is ideal for protecting sensitive components. The diode also has a fast response time, rated at 1.0 nanoseconds, making it one of the fastest devices available. In addition, its low impedance makes it suitable for use in high frequency devices such as cellphone chargers, computers, and other small electronic products.
Working Principle
The MXSMLJ12CAE3/TR is designed to protect against transients within its rated voltage range. When a voltage spike occurs, the diode triggers an avalanche breakdown in which electrons are accelerated to a high velocity. This is a fast process that produces few secondary electrons, thus preventing further electrons from accelerating. As a result, the voltage spike is diverted away from sensitive components, thus protecting them from further harm. The diode can also protect against any current that may flow through the device.
The MXSMLJ12CAE3/TR also has a high energy absorption capability. This makes it suitable for use in applications where the voltage spike may be greater than its rated voltage range. With its low capacitance, the diode is able to provide protection against surges with peaks up to 40 kilovolts.
Applications
Due to its fast response time, the MXSMLJ12CAE3/TR is suitable for use in a variety of different applications, including computers, modems, cellphone chargers, industrial equipment, and automobiles. In addition, its low capacitance and high energy absorption capabilities make it ideal for applications where voltage spikes and surges may be higher than expected. With its wide voltage range, the diode is also suitable for use in both low- and high-voltage applications.
Overall, the MXSMLJ12CAE3/TR is an ideal solution for protecting sensitive electronics from transients and voltage surges. Its triggered avalanche breakdown provides fast protection against surges, while its low capacitance makes it suitable for high frequency applications. With its wide range of applications, the diode is a critical tool for protecting sensitive components from damage.
The specific data is subject to PDF, and the above content is for reference
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