NCP3418BDR2G

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The NCP3418BDR2G is part of the NCP3418 series of gate drivers from ON Semiconductor. It is a monolithic integrated logic device designed to provide high-performance and cost-effective cold-head-emitted gate driver solutions for synchronous rectification (SR) power MOSFETs (PMOS) and n-channel MOSFETs (NMOS).It is a highly efficient MOSFET driver that integrates protected low-side NMOS and high-side PMOS in the same package. It provides an accurate start-up trigger threshold that is adjustable to meet customer requirements. Its wide operating temperature range from –40 to 125°C enables reliable operation up to currents of 12.5A.The NCP3418BDR2G also supports thermal management with programmable over-temperature warning/shutdown functionality. Its fast drain-to-source propagation delay, low-side gate drive current of 130 mA, and short-circuit protection improve system reliability and reduce power dissipation.The NCP3418BDR2G is suitable for use in a wide variety of applications such as power over Ethernet (POE), automotive power accessories, white-goods consumer electronics, motor control, industrial motor drives, and medical applications.The NCP3418BDR2G is designed to provide driving and signal protection for high-current and high-side/low-side applications. It is easily synchronized with the input signal and offers precise control over MOSFET switching with adaptive signal conditioning for superior transient performance. The device also offers multiple fault protection features including undervoltage lockout, overvoltage protection, overcurrent protection and overtemperature protection.

The NCP3418BDR2G offers superior gate driving performance, with a maximum turn-on and turn-off delay times of 75ns and 69ns respectively. It provides start-up and shut-down times that are adjustable to meet customer requirements. The operating voltage range is from 4V to 20V, and it provides a supply current of less than 3mA. It can support up to 12.5A of continuous current and a maximum peak current of 25A.The working principle of the NCP3418BDR2G is based on the logic beneath its architecture. The device uses a logic-level signal to control both the high-side and low-side MOSFETs. When the logic signal is low, the P-Channel MOSFET is turned on and the N-Channel MOSFET is turned off. Conversely, when the logic signal is high, the P-Channel MOSFET turns off and the N-Channel MOSFET is turned on. With this configuration, the NCP3418BDR2G can accurately and efficiently control the power switch.The gate driver can also provide dynamic protection against over-temperature, over-current and undervoltage conditions. It monitors the voltage across the MOSFETs, and when the voltage exceeds the preset threshold, the gate driver will shut down the MOSFETs and signal an error condition. It will also shut down the MOSFETs if the temperature of the device rises above the preset threshold. This provides system-level protection and helps to prevent accidental damage that could occur due to excessive current draw or rising temperatures.

In conclusion, the NCP3418BDR2G is a high-performance gate driver that provides enhanced protection, precise control and superior transient performance. Its wide operating temperature range, low operating current and robust failure protection make it ideal for use in synchronous rectification applications such as power over Ethernet (POE), automotive power accessories, white-goods consumer electronics, motor control and industrial motor drives.

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